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人工晶体学报 ›› 2025, Vol. 54 ›› Issue (6): 942-948.DOI: 10.16553/j.cnki.issn1000-985x.2025.0027

• 研究论文 • 上一篇    下一篇

钢缆直径对大尺寸直拉单晶硅生长稳定性的影响

朱丽涛1,2(), 刘磊3, 原帅1,2(), 周声浪3, 张华利3, 汪晨3, 高宇4, 曹建伟4, 余学功1, 杨德仁1,2()   

  1. 1.浙江大学材料科学与工程学院,硅及先进半导体材料全国重点实验室,杭州 310027
    2.浙江大学上虞半导体材料研究中心,绍兴 312399
    3.江苏协鑫硅材料科技发展有限公司,江苏省硅基电子材料重点实验室,徐州 221132
    4.浙江晶盛机电有限责任公司,浙江省高性能硅材料装备全省重点实验室,绍兴 312352
  • 收稿日期:2025-03-01 出版日期:2025-06-20 发布日期:2025-06-23
  • 通信作者: 原帅,博士,特聘研究员。E-mail:shuaiyuan@zju.edu.cn; 杨德仁,博士,教授。E-mail:mseyang@zju.edu.cn
  • 作者简介:朱丽涛(1999—),女,山东省人,硕士研究生。E-mail:22226100@zju.edu.cn
  • 基金资助:
    国家重点研发计划课题(2024YFB4204902);浙江省“尖兵”科技计划项目(2024C01054);江苏省硅基电子材料重点实验室开放基金

Effect of Cable Diameter on Growth Stability of Large-Size Czochralski Silicon Crystals

ZHU Litao1,2(), LIU Lei3, YUAN Shuai1,2(), ZHOU Shenglang3, ZHANG Huali3, WANG Chen3, GAO Yu4, CAO Jianwei4, YU Xuegong1, YANG Deren1,2()   

  1. 1.State Key Lab of Silicon and Advanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China
    2.Shangyu Institute of Semiconductor Materials,Zhejiang University,Shaoxing 312399,China
    3.Jiangsu Provincial Key Laboratory of Silicon-based Electronic Materials,Jiangsu GCL Silicon Material Technology Development Co.,Ltd.,Xuzhou 221132,China
    4.Provincial Key Laboratory of High-Performance Silicon Material Equipment,Zhejiang Jingsheng Mechanical & Electrical Co.,Ltd.,Shaoxing 312352,China
  • Received:2025-03-01 Online:2025-06-20 Published:2025-06-23

摘要: 直拉单晶硅生长技术的发展促进了更大尺寸晶体的生产。目前,在重复拉晶过程中,单炉最后一根晶体的质量通常达到600~800 kg,已超过成熟技术中提拉钢缆的工程载荷上限。本文报道了设备改造中因增加提拉钢缆直径而引发的稳定性问题及其解决方案。研究发现,钢缆增粗后刚性增强,导致籽晶发生倾斜,进而在低负载时引发棱线偏移,在高负载时增加细颈断裂的风险。通过控制变量实验,本研究确认钢缆增粗后晶体生长稳定性的问题主要源于籽晶倾斜。此外,采用数值模拟方法进一步分析了籽晶倾斜所诱发的应力分布机制。最终,通过增加配重的方法,有效恢复了晶体生长的稳定性。

关键词: 硅; 提拉法; 重复拉晶; 籽晶; 应力; 晶体生长; 提拉钢缆

Abstract: The development of the Czochralski (Cz) method for growing monocrystalline silicon has facilitated the production of larger crystals. Currently, in the repetitive Cz process, the weight of final crystal in a single furnace typically reaches 600~800 kg, exceeding the engineering load limit of pulling cable in established technologies. This paper reports stability issues arising from increasing the diameter of pulling cable during equipment upgrades, along with corresponding solutions. The study reveals that the increased rigidity of the thicker cable causes seed crystal tilting, which leads to ridge line deviation under low-load conditions and elevates the risk of neck fracture under high-load conditions. Through controlled variable experiments, this work confirms that the stability issues in crystal growth after cable thickening primarily stem from seed crystal tilting. Furthermore, numerical simulation methods were employed to analyze the stress distribution mechanisms induced by seed tilting. Ultimately, stability in crystal growth was successfully restored by adding counterweights.

Key words: silicon; Czochralski; repetitive Czochralski; seed crystal; stress; crystal growth; pulling cable

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