Halide perovskite crystals have emerged as promising candidates for nuclear radiation detection due to their high average atomic numbers， large carrier mobility lifetime products （μτ）， scalable large-area fabrication， and diverse material system. This review systematically examines the growth methods of perovskite semiconductor single crystals， as alongside recent advancements in radiation detector research. Controllable growth of large-size， high-quality single crystals is crucial for developing high-performance detectors. Through innovative crystal growth techniques combined with strategies such as cation-donor， anion-acceptor co-doping， and additive-assisted engineering， significant improvements in crystal dimensions and electrical performance acquired. Perovskite semiconductor single crystals offer unparalleled advantages in photon-counting X-ray imaging and γ-ray energy spectrum resolution that perovskite thin films cannot match. However， key challenges persist， including further improving the intrinsic quality of the crystals， addressing device stability issues caused by ion migration， and optimizing the bonding process between the crystals and pixel chips. Future research should focus on exploring the relationship between crystal structure and performance， optimizing growth process parameters， and innovating detector architectures to accelerate the industrialization of halide perovskite crystals in nuclear radiation detection applications.

X-ray detectors play a vital role in medical diagnostics， security screening， industrial nondestructive testing， and scientific research. Halide perovskites （HPs） have garnered significant attention for high-performance X-ray detection due to their large X-ray absorption coefficient， long carrier diffusion length， and superior optical properties. Notably， the flexible synthesis of HPs enables facile fabrication into polycrystalline films， wafers， and other forms. However， differences in crystallization behavior induced by fabrication methods result in varied defect distributions within the active layer， such as crystallographic orientation， grain boundaries， cracks， and pinholes， which critically impact charge carrier transport and scintillation efficiency and degrade the device performance. Therefore， elucidating crystallization mechanisms under different fabrication conditions and developing tailored control strategies are imperative. Here we systematically review the recent advances in HPs X-ray detectors： 1） wet chemical synthesis approaches and crystallization regulation strategies； 2） crystallization regulation in pressing methods， ion migration suppression， and scintillator wafer development； 3） analyzing crystallization mechanisms in vapor deposition processes， strategies for enhancing scintillator performance， and exploratory efforts toward direct X-ray detection applications. Finally， we highlight existing challenges and future prospects for advancing HPs X-ray detectors.

In recent years， rare earth ion-doped perovskite materials have garnered significant attention from researchers in the field of optoelectronic functional materials due to their excellent optoelectronic properties， tunable bandgaps， and unique quantum-cutting effects. Among them， ytterbium ion （Yb³⁺）-doped perovskite nanomaterials， with their remarkable optical characteristics such as exceptionally large Stokes shifts， photoluminescence quantum yields exceeding 100%， and efficient near-infrared luminescence， have demonstrated immense application potential in X-ray imaging， multi-energy X-ray imaging， luminescent solar concentrators， solar cells， and near-infrared electroluminescent devices. This review focuses on the quantum-cutting properties of Yb³⁺-doped perovskite nanocrystals， systematically discussing the topic in two parts： comprehensively outlines the synthesis strategies， quantum-cutting luminescence mechanisms， and optoelectronic applications of Yb³⁺-doped CsPbCl₃ nanocrystals； delves into the advancements of quantum-cutting perovskite scintillators and their latest breakthroughs in X-ray imaging， and multi-energy X-ray imaging. By analyzing the current scientific challenges and technical bottlenecks， this review also prospects future research directions and development trends， providing valuable insights for the further study and application of quantum-cutting materials.

Blue perovskite electroluminescent devices offer outstanding color purity and cost-effective fabrication， making them highly promising for applications in full-color displays and white light illumination. Quasi-two-dimensional （quasi-2D） perovskites， owing to their outstanding optical properties and structural tunability， have showed broad application prospects. However， the regulation of their crystallization kinetics is critical for optimizing film quality and luminescent performance. This review summarizes the optical and photophysical characteristics of blue quasi-2D perovskites， with a particular focus on strategies for controlling their crystallization behavior through component management， additive engineering， post-treatment technology， and interfacial modification. Studies demonstrate that precise control crystallization kinetics of quasi-2D perovskites can significantly enhance uniformity and photoluminescence quantum yield of the films， while also improving the external quantum efficiency and operational stability of the devices. Finally， the paper analyzes the current challenges and limitations in this field， and provides a perspective on future development directions toward high-efficiency， high-brightness， and long-lifetime blue perovskite electroluminescent devices， offering theoretical insights and technical guidance for future research.

CsPbBr₃ crystal has emerged as a promising candidate material for next-generation semiconductor radiation detectors due to its high atomic number， excellent charge transport properties， and room-temperature operability. However， defects in the crystal （point defects， twins， and secondary phases） significantly degrade its performance. This review systematically analyzes the formation mechanisms of defects in CsPbBr₃ and their impact on carrier transport， lattice polaron effects dominate intrinsic scattering while point defects （e.g.， Pb interstitials） introduce deep-level traps that enhance carrier recombination， ferroelastic domains （twins） induce carrier localization through interfacial potential barriers， and secondary phases （e.g.， CsPb₂Br₅） reduce mobility and resistivity via light scattering and incoherent interfaces. The study highlights differences in defect distribution between melt- and solution-grown crystals and proposes optimization strategies such as stoichiometric control， solvent engineering， and annealing. Although CsPbBr₃ demonstrates X/γ-ray energy resolution comparable to commercial CdZnTe （e.g.， 1.4%@662 keV）， defect dynamics and ion migration hinder stability. Future research should focus on elucidating polaron-defect interactions， developing defect suppression techniques， and designing novel device architectures to advance its applications in nuclear medicine imaging and deep-space exploration.

Metal halide perovskite materials have demonstrated significant application potential in fields such as solar cells， light-emitting diodes， and photodetectors due to their excellent optoelectronic properties and tunable crystal structures. Structural distortion， as a crucial means of regulating the performance of perovskite materials， can significantly influence their electronic structure， carrier dynamics， and optoelectronic properties， providing an important pathway for designing novel functional materials. In recent years， research on the regulation of lattice distortion in perovskite single crystals has made remarkable progress. By altering substrate properties， introducing organic cations， modulating halide composition， or applying external stress， researchers can effectively adjust the lattice symmetry and electronic band structure of perovskite single crystals， thereby optimizing their optoelectronic performance. In particular， the regulatory effects of lattice distortion on carrier dynamics， exciton behavior， and defect state density offer new avenues for developing high-performance perovskite devices. This paper first elaborates on the characterization methods and mechanistic principles of structural distortions in perovskite materials， then thoroughly analyzes the key influencing factors that induce structural distortions under experimental conditions. Furthermore， it provides an in-depth discussion on the structure-property relationship between lattice distortions and optoelectronic performance， offering both theoretical foundations and practical guidance for structural distortion control and performance optimization of perovskite optoelectronic materials.

In recent years， thermally activated delayed fluorescence （TADF） scintillators have shown broad application prospects in radiation detection and X-ray imaging due to their high exciton utilization and high light yield. TADF scintillators realize the excited state transition from triplet state to singlet state through the reverse inter-system crossing （RISC） mechanism， which significantly improves the photoluminescence quantum yield and light yield. In this paper， the latest research progress of TADF scintillators is reviewed， and the research progress of its scintillation mechanism and different material systems is discussed. The design and performance of TADF scintillators based on all-inorganic materials， organic molecules and organic-inorganic hybrid systems （new donor acceptor structures， metal clusters） are mainly introduced. Although TADF scintillators have made significant progress in luminous efficiency and stability， they still face challenges such as material degradation under high energy radiation and large-scale preparation. Future research needs to further explore new TADF scintillators and clear luminescence mechanism to achieve more efficient and stable radiation detection applications.

With the increasing global demand for environmentally friendly optoelectronic materials， tin-based halide perovskites have emerged as promising candidates to replace traditional lead-based perovskites owing to their eco-friendly and superior optoelectronic properties. Although tin-based perovskites exhibit remarkable advantages in light absorption and charge carrier transport， their stability and device performance are greatly hindered by the easy oxidation of Sn2? and the formation of lattice defects during rapid crystallization. Recently， extensive research on crystal growth， defect control， and interface engineering of tin-based perovskites has been carried out worldwide. Various synthesis techniques such as inverse temperature crystallization， cooling crystallization， and high-temperature melting have been developed. Multiscale characterization methods have been utilized to deeply understand the microstructure， defect distribution， and interface properties of these materials. Experimental results indicate that optimizing growth parameters and preparation environments can significantly enhance crystal quality， reduce defect density， and improve charge carrier transport efficiency， thus facilitating the application of tin-based single crystals in devices such as photodetectors， high-sensitivity detectors， solar cells， and field-effect transistors. Future research should focus on optimizing the kinetics of single crystal growth， developing robust anti-oxidation strategies， and refining interface energy level alignment. Such efforts are expected to overcome current challenges related to stability and reproducibility， thereby promoting the scalable application of tin-based perovskite.

All-inorganic halide perovskites， as semiconductor materials with tunable bandgaps， exhibit superior thermal and photostability compared to organic-inorganic hybrid perovskites， and have recently garnered significant attention in solar cells， UV-Vis photodetectors， and light-emitting diodes， demonstrating potential as pivotal materials for advancing high-performance optoelectronic devices. Epitaxial growth technology， through the construction of lattice-matched heterointerfaces for high-quality crystalline film deposition， combined with strain engineering for photoelectronic property modulation， has emerged as a cornerstone strategy in semiconductor manufacturing. As all-inorganic halide perovskites progress toward commercial optoelectronic applications， critical challenges emerge in precisely controlling film crystallinity， reducing defect-state densities， and optimizing interface characteristics. This review comprehensively examines the material structures of halide perovskites and fundamental principles of epitaxial growth， discusses recent advances in epitaxial growth of all-inorganic halide perovskite films based on fabrication methodologies and substrate lattice-matching criteria in classification. Finally， this review outlines future research directions， proposing that in situ growth monitoring， atomic-scale interface characterization， and scalable manufacturing processes will further enhance device performance and application breadth of all-inorganic halide perovskites.

The ?5 mm Cs₃CdBr₅ single crystals were grown using the Bridgman method， and Cs₃CdBr₅-CsBr composite scintillator were formed by CsBr encapsulating Cs₃CdBr₅ in the cone of the ingot. We conducted phase analysis on the crystal which explained the formation of composite scintillators， and investigated the photoluminescence and X-ray excited luminescence properties. The Cs₃CdBr₅ crystal belongs to the tetragonal crystal system with a space group of I4/mcm. It is of a 0-dimensional perovskite structure. The emission peaks of Cs₃CdBr₅ single crystal excited by fluorescence and X-ray are at 374 and 365 nm， respectively. The decay time of photoluminescence is 0.4 and 16.6 ns， while the decay time of X-ray excited luminescence is 15.9 ns， which is the intrinsic luminescence of Cs₃CdBr₅ with self-absorption. Under the same excitation， Cs₃CdBr₅-CsBr composite scintillators exhibit relatively stronger luminescence peaking at 365 nm， with photoluminescence decay time of 0.97 and 14.79 ns， X-ray excited luminescence decay time of 17 ns. There is luminescence of CsBr peaking at 438 nm under X-ray excitation， which contributes to sub-millisecond slow fraction. The Cs₃CdBr₅-CsBr composite scintillator exhibits an energy resolution of 56.9% and a light yield of 257 photons/MeV when excited by ²⁴¹Am source. The good environmental stability and special 0-dimensional perovskite structure make doped crystals based on Cs₃CdBr₅ promising scintillation crystals with practical application value.

Metal halide perovskites （MHPs） single crystals have potential applications in the field of radiation detection due to their excellent optoelectronic properties. Additionally， suppressing defects both in the bulk during single crystal growth and on the surface after growth is expected to further improve the performance of semiconductor radiation detectors. In this study， high-quality MAPbBr₃ single crystals with dimensions exceeding 10 mm×10 mm were grown by inverse temperature crystallization （ITC） using the amphiphilic surfactant thiobetaine 10 as an additive. The mechanism of additive-optimized crystal growth was analyzed and characterized. The synergistic effect of sulfonic acid amphiphiles in crystallization control and defect passivation significantly suppressed defect formation. The full width at half maximum （FWHM） of the grown MAPbBr₃ single crystals reduces from 0.071° to 0.046°， while the long-chained alkyl groups make the surface of the crystals exhibit excellent hydrophobicity， increasing the surface contact angle increases from 84.04° to 96.25°. These results demonstrate an overall improvement in MHP single crystal quality. A device with Ni/Au-Ni/Au ring-symmetric electrodes was prepared， and the device resistivity increases from 2.08×10⁷ Ω·cm to 2.82×10⁸ Ω·cm， with a carrier mobility lifetime product of 1.81×10^-2 cm²·V^-1. Furthermore， MAPbBr₃ single crystals detector achieve an X-ray detection sensitivity of 1 459 μC·Gy_air^-1·cm^-2 under 50 kV X-ray irradiation and maintain stable operation over a 1 000 s test period. This strategy advances the practical application of perovskite single crystals in X-ray detection. Moreover， our strategy contributes to further progress in the practical application of perovskite single crystals in the field of X-ray detection.

CsPbBr₃ single crystals （SCs） exhibit exceptional properties such as high atomic number， large carrier mobility-lifetime product， high resistivity， and excellent X/γ-ray absorption， making them promising materials for semiconductor radiation detectors. While solution-based methods enable cost-effective growth of CsPbBr₃ SCs， the resulting crystals often show a preferred orientation， rod-like shape and fast growth rates that lead to defects such as twinning， which hinder device fabrication. In this study， cetyltrimethylammonium bromide （CTAB） was introduced as an additive during inverse temperature crystallization to enhance crystal growth （it primarily decelerates the growth rate along the ［002］ direction， thus suppressing the preferential orientation of CsPbBr₃ SCs） and quality. The obtained CsPbBr₃ single crystal exhibits rocking curve full width at half maximum （FWHM） of 0.08°， a high resistivity of 8.14×10⁹ Ω·cm， an enhanced carrier mobility-lifetime product of 6.44×10^-3 cm²·V^-1， and a low trap density of 2.07×10¹⁰ cm^-3， indicating its high crystalline quality and electrical properties. Additionally， a γ-ray detector fabricated from the CsPbBr₃ SC achieved high performance， with an energy resolution of 10.25% for 59.5 keV γ-photons from a ²⁴¹Am isotope. These results highlight the potential of additive-assisted growth for producing high-quality CsPbBr₃ SCs for advanced radiation detection applications.

?12 mm×35 mm CsSnBr₃ crystals doped with 1% Sn（Ⅳ） and undoped crystals were successfully prepared by Bridgman method， and the solution grown CsSnBr₃ crystal was used as the control. The phase， electrical and optical properties of all crystal samples were studied. CsSnBr₃ crystals belong to the cubic system with space group Pm3m. The band gap of undoped CsSnBr₃ is 1.79 eV. The carrier concentration and mobility of CsSnBr₃ crystals can be significantly improved by doping 1%Sn（Ⅳ）， with the carrier concentration increasing from 6.1×10¹⁶ cm^-3 to 1.0×10¹⁸ cm^-3， and the mobility from 5.7 cm2·V^-1·s^-1 to 36 cm2·V^-1·s^-1. The mobility reaches the equivalent level of the solution method crystal. CsSnBr₃ has a photoluminescence （PL） emission peak at about 680 nm. Sn（Ⅳ） can also inhibit the non-radiative recombination process of carriers， reducing the non-radiative recombination probability and improving the PL intensity， while the PL lifetime remains unaffected. Calculation results indicate that the minority carrier diffusion length of the CsSnBr₃ crystal with 1% Sn（Ⅳ） is nearly three times as long as that of the undoped crystal. CsSnBr₃ crystals exhibit tolerance to stoichiometric ratio deviations. Within the deviation range of ±1%， the crystal performance is not significantly affected， and the excess components are separated from the crystal surface in specific forms. It is concluded that a small amount of Sn（Ⅳ） can actually increase the conductivity of tin perovskite materials and may protect grain boundaries， weakening the scattering and the non-radiative recombination of carriers at grain boundaries. The discovery of stoichiometric tolerance provides flexibility in raw material ratio for the preparation of tin perovskite materials， deepens the understanding of the growth mechanism of CsSnBr₃ crystal， and reduces the technical difficulty.

Two-dimensional Ruddlesden-Popper （RP） layered perovskites have received lots of attention in recent years due to their excellent optoelectronic properties and good environmental stability. Their unique properties make them ideal candidates for applications in solar cells， light-emitting diodes， and X-ray detectors. However， two-dimensional RP-type layered perovskites synthesized by solution methods typically exhibit mixed phases with random inorganic layer numbers （i.e.， multiple n-values）， which hinders their application. In this study， the crystallization process of RP layered perovskites was regulated by replacing BAI with BAAc to achieve effective phase purification. The enhancement in phase purity was confirmed by characterization methods， and the phase-purified perovskite material exhibits reduced defects. Consequently， significantly improved carrier extraction and transport capabilities， along with suppressed ion migration were achieved. These structural improvements directly enhanced the performance of the X-ray detectors. The phase-purified detectors exhibit lower detection limits （160.24 nGy_air·s^-1） compared to the unpurified devices， demonstrating stronger capability in low-dose X-ray detection. Additionally， the phase-purified device shows good irradiation stability. Therefore， phase purification not only effectively improved the detection performance of two-dimensional perovskite X-ray detectors but also enhanced device stability， proving the broad application prospects of phase-purification technology in perovskite X-ray detectors.

Scintillators maintaining prolonged luminescence stability under high-dose irradiation is important for industrial nondestructive testing applications. Consequently， precisely evaluate the irradiation stability carries substantial engineering significance in both predicting scintillator lifespan and deciphering performance degradation mechanisms. CsPbBr₃ perovskite quantum dot （QD） scintillators have garnered significant attentions due to their outstanding properties， including high radiation hardness， strong X-ray stopping power， nanosecond-scale emission time， low-temperature synthesis， and large-area and flexible manufacturing. Here， CsPbBr₃ QD scintillators are fabricated via a solid-phase thermoforming technique. The QDs are uniformly dispersed within a polymer matrix observed by the morphology characterization. When QD weight fraction is 2%， the scintillator exhibits a transparent bright green appearance with an X-ray absorption efficiency of 6%. When the weight fraction increases to 20%， the scintillator turns opaque and bright yellow， with the X-ray absorption efficiency rising to 54%. Moreover， under an X-ray irradiation dose of 10 kGy based on the actual X-ray absorption， the CsPbBr₃ QD scintillator maintains unchanged radioluminescence （RL） spectra. This excellent irradiation stability results from that the shallow defect states introduced by displacement damage and the parasitic electric fields generated by ionization damage have minimal impacts on the radiative recombination luminescence of CsPbBr₃ QDs. This work highlights the potential application of CsPbBr₃ QD scintillators in the long-term X-ray detection.

Semiconductor radiation detection materials， as core components of X-ray imaging technology， have been widely applied in medical imaging and industrial inspection. In recent years， three-dimensional （3D） perovskite materials have been demonstrated significant potential in semiconductor radiation detection due to their high atomic number， strong photoelectric conversion efficiency， and low fabrication cost. However， challenges for the materials， such as severe ionic migration-induced high dark current and instability， critically hinder their practical device applications. In this study， based on structural dimensionality modulation strategy， cyclohexylamine （CHA） was introduced to slice the 3D halogen-lead skeleton and to form layered perovskites CHA₂PbBr₄， achieving highly efficient and stable X-ray detection. Millimeter-sized CHA₂PbBr₄ single crystals were synthesized via a optimize-cooling solvothermal method， exhibiting with layered morphology with orientated growth. Benefiting from the suppressed ionic migration and dark current enabled by the layered structure， the CHA₂PbBr₄ single crystal exhibits a high resistivity of 1.64×10¹⁰ Ω·cm， as well as single-crystal device demonstrates a remarkable sensitivity of 3 791.4 μC·Gy_air^-1·cm^-2 under high electric field and an ultra-low detection limit of 84.55 nGy_air·s^-1. These results demonstrate that layered structural modulation of organic long-chains enables synergistic optimization of multi radiation detection performances， providing a potential candidate for high-performance X-ray detectors.

In this study， I^- doped Cs₃Bi₂Br₉ crystals （Cs₃Bi₂I _x Br_9-x ） were successfully grown using the solution cooling method. The influence of I^- doping on the crystal structure， thermal stability， and optical properties of Cs₃Bi₂Br₉ was systematically investigated. The Cs₃Bi₂I _x Br_9-x crystals obtained through growth have a size of 5 mm.The doped crystal exhibits an orange-red color， which is distinctly different from the yellow color of the undoped crystal. The XRD results show that the doped crystal still maintains a hexagonal structure with the P3m1 space group， while displaying a shift of diffraction peaks towards smaller angles， indicating lattice expansion due to the difference in radius between the I^- and Br^-. Thermal analysis shows that the crystal remains stable up to 475.2 ℃， slightly higher than that of Cs₃Bi₂Br₉. Optical tests reveal that after doping， the crystal absorption cut-off edge redshift from 486 nm to 590 nm， resulting in a decrease in the bandgap from 2.61 eV to 2.18 eV， thus significantly broadening the photoresponse range. The main photoluminescence （PL） peak blue shifts to 447 nm （with a full width at half maximum of 97.7 nm， CIE coordinates （0.27， 0.24））， and the fluorescence lifetime exhibits a double exponential decay （τ₁=2.18 ns， 38%； τ₂=32.32 ns， 62%）. This study confirms that I^- doping can achieve an optimization of the thermal stability and optoelectronic properties of Cs₃Bi₂Br₉ crystals， providing a new pathway for the application of lead-free perovskites in the field of optoelectronic devices.

Organometallic halides have shown great potential in X-ray imaging. However， problems such as poor uniformity， low transmittance and light scattering of polycrystalline thin film scintillator screens seriously reduce the X-ray imaging resolution. In this paper， inch-size （C₂₄H₂₀P）₂MnBr₄ single crystalline film was prepared by the space confinement method， and the phase， optical and scintillation properties were studied. This crystal exhibits a photoluminescence quantum yield （PLQY） of 90% and excellent photostability. After continuous irradiation of the crystal with 365 nm ultraviolet light for 24 h， its spectrum remains stable. Based on the excellent optical properties of this crystal， a high light yield of 83 000 photons/MeV （estimated value） is generated under X-rays， which is 2.5 times higher than that of commercial LYSO scintillator. In addition， this crystal exhibits excellent radiation stability and maintains its performance stability even after being exposed to a high dose rate of 504 mGy·s^-1 for 60 min. Based on the above advantages， the （C₂₄H₂₀P）₂MnBr₄ single crystalline film is applied into X-ray imaging， achieving a spatial resolution of approximately 23 lp/mm， demonstrating great application potential in this field.

The effects of ball milling duration on the phase and carrier dynamics of perovskite powders and thick films were investigated in the study. It is found that as the ball milling time increases， more defects are introduced in the obtained perovskie powder， leading to a decrease in the photoluminescence intensities and carrier lifetimes of both perovskite powders and final thick films. Additionally， solvent mixing and thermal treatment during the thick film preparation process are found to further enhance the crystallinity and carrier lifetime. Therefore， under the premise of obtaining pure perovskite thick films， the shorter is the ball milling time， the better is the thick films. Ultimately， a sample prepared with 15 min of ball milling achieves the longest carrier lifetime of 820.0 ns and the highest X-ray sensitivity of 728.85 μC·Gy_air^-1·cm^-2. This study provides a useful guide for the rapid preparation of X-ray detectors based on perovskite thick films.