Halide perovskite crystals have emerged as promising candidates for nuclear radiation detection due to their high average atomic numbers, large carrier mobility lifetime products (μτ), scalable large-area fabrication, and diverse material system. This review systematically examines the growth methods of perovskite semiconductor single crystals, as alongside recent advancements in radiation detector research. Controllable growth of large-size, high-quality single crystals is crucial for developing high-performance detectors. Through innovative crystal growth techniques combined with strategies such as cation-donor, anion-acceptor co-doping, and additive-assisted engineering, significant improvements in crystal dimensions and electrical performance acquired. Perovskite semiconductor single crystals offer unparalleled advantages in photon-counting X-ray imaging and γ-ray energy spectrum resolution that perovskite thin films cannot match. However, key challenges persist, including further improving the intrinsic quality of the crystals, addressing device stability issues caused by ion migration, and optimizing the bonding process between the crystals and pixel chips. Future research should focus on exploring the relationship between crystal structure and performance, optimizing growth process parameters, and innovating detector architectures to accelerate the industrialization of halide perovskite crystals in nuclear radiation detection applications.