Abstract: The monocrystalline diamond film about 100μm2 in size has been carried out on Si substrate using an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR CVD) from the gas mixture of methane and hydrogen. The Si substrate was not pre-treated before growth. The radio frequency (RF) bias was employed in the growth process. The substrate was placed in the electron cyclotron region. Experiment result indicates that the growth of the monocrystalline diamond on Si substrate depends on the pre-formed β-SiC interlayer, and the application of RF negative bias to the substrate relative to the plasma played a crucial role in the formation of the β-SiC interlayer.

Key words: The monocrystalline diamond film about 100μm2 in size has been carried out on Si substrate using an electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR CVD) from the gas mixture of methane and hydrogen. The Si substrate was not pre-treated before growth. The radio frequency (RF) bias was employed in the growth process. The substrate was placed in the electron cyclotron region. Experiment result indicates that the growth of the monocrystalline diamond on Si substrate depends on the pre-formed β-SiC interlayer, and the application of RF negative bias to the substrate relative to the plasma played a crucial role in the formation of the β-SiC interlayer.