Spectral Properties in Semiconductor GaAs—Ga0.65Al0.35As Multi-quantum Well(MQW) Structures and the Possibility of Laser Cooling

JOURNAL OF SYNTHETIC CRYSTALS ›› 2001, Vol. 30 ›› Issue (2): 159-162.

Spectral Properties in Semiconductor GaAs—Ga0.65Al0.35As Multi-quantum Well(MQW) Structures and the Possibility of Laser Cooling

ZHANG Xi-tian;ZHANG Wei-Li;GAO Hong;XU Wu;QIN Wei-ping;ZHANG Jia-hua;CHEN Bao-jiu

Online:2001-02-15 Published:2021-01-20

Abstract

Abstract: The spectral properties in GaAs—Ga0.65Al0.35As multi-quantum well (MQW) structures have been developed by using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy.The up-conversion of luminescence in GaAs—Ga0.65Al0.35As multi-quantum wells is observed.We put forward the possibility of laser cooling in semiconductor GaAs MQW for the first time.The mechanism of luminescence on the spectrum in GaAs MQW is researched.

Key words: The spectral properties in GaAs—Ga0.65Al0.35As multi-quantum well (MQW) structures have been developed by using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy.The up-conversion of luminescence in GaAs—Ga0.65Al0.35As multi-quantum wells is observed.We put forward the possibility of laser cooling in semiconductor GaAs MQW for the first time.The mechanism of luminescence on the spectrum in GaAs MQW is researched.

CLC Number:

O471.1

ZHANG Xi-tian;ZHANG Wei-Li;GAO Hong;XU Wu;QIN Wei-ping;ZHANG Jia-hua;CHEN Bao-jiu. Spectral Properties in Semiconductor GaAs—Ga0.65Al0.35As Multi-quantum Well(MQW) Structures and the Possibility of Laser Cooling[J]. Journal of Synthetic Crystals, 2001, 30(2): 159-162.

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Spectral Properties in Semiconductor GaAs—Ga0.65Al0.35As Multi-quantum Well(MQW) Structures and the Possibility of Laser Cooling

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