Abstract: A series of silicon-based samples were fabricated by the very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique at various discharge powers. The results show that the transition zone occures at different discharge power for silane concentration (SC=[SiH4]/[SiH4+H2]) of 4; and 6;. Furthermore, the dark conductivity also shows different changes with the increase of the crystalline volume fraction, indicating a different relationship between the structural and electrical properties for the samples prepared at different discharge power for the different SC. In addition, the microstructure measurements of the film characterized by scanning electronic microscopy show the evident ‘cauliflower-like' surface morphology and columnar structure.

Key words: A series of silicon-based samples were fabricated by the very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique at various discharge powers. The results show that the transition zone occures at different discharge power for silane concentration (SC=[SiH4]/[SiH4+H2]) of 4; and 6;. Furthermore, the dark conductivity also shows different changes with the increase of the crystalline volume fraction, indicating a different relationship between the structural and electrical properties for the samples prepared at different discharge power for the different SC. In addition, the microstructure measurements of the film characterized by scanning electronic microscopy show the evident ‘cauliflower-like' surface morphology and columnar structure.