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JOURNAL OF SYNTHETIC CRYSTALS ›› 2004, Vol. 33 ›› Issue (4): 679-682.

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Further Study on Improvement of Adhesive Force of Diamond Films with Si Substrates by Ion Bombardment

  

  • Online:2004-08-15 Published:2021-01-20

Abstract: Owing to the large surface energy difference of diamond with silicon, the diamond nucleation on the mirror-polished silicon surface is difficult when diamond films are prepared by chemical vapor deposition. However, the nucleation can be enhanced by a negative substrate bias, indicating that the adhesive force of diamond nuclei on Si surface is improved. The ion bombardment results in a production of micro-defects(pits)on Si substrate surface and therefore the contact area of diamond film with Si surface is enlarged. Based on these results, the influence of ion bombardment on Si surface with the negative bias was analyzed and the effect of ion bombardment on the adhesive force between diamond film and Si substrate was theoretically studied.

Key words: Owing to the large surface energy difference of diamond with silicon, the diamond nucleation on the mirror-polished silicon surface is difficult when diamond films are prepared by chemical vapor deposition. However, the nucleation can be enhanced by a negative substrate bias, indicating that the adhesive force of diamond nuclei on Si surface is improved. The ion bombardment results in a production of micro-defects(pits)on Si substrate surface and therefore the contact area of diamond film with Si surface is enlarged. Based on these results, the influence of ion bombardment on Si surface with the negative bias was analyzed and the effect of ion bombardment on the adhesive force between diamond film and Si substrate was theoretically studied.

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