Abstract: Microcrystalline silicon thin films were deposited under high deposition pressures using radio frequency plasma enhanced chemical vapor deposition (RF PECVD). Microstructures were studied using Raman, scanning electron microscopy (SEM). It is found that deposition rate shows a maximum at around 5Torr. The crystalline volume ratio decreases with the deposition pressure increasing. Larger grains or clusters are observed as pressure decreases. The films become less poros as pressure increases.

Key words: Microcrystalline silicon thin films were deposited under high deposition pressures using radio frequency plasma enhanced chemical vapor deposition (RF PECVD). Microstructures were studied using Raman, scanning electron microscopy (SEM). It is found that deposition rate shows a maximum at around 5Torr. The crystalline volume ratio decreases with the deposition pressure increasing. Larger grains or clusters are observed as pressure decreases. The films become less poros as pressure increases.