Quantum States in Fabricating Poly-Si Thin Film by Rapid Thermal Annealing

Abstract

Abstract: Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapidthermal annealing (RTA), from X-ray diffraction (XRD), micro-Raman scattering and scanningelectronic microscope (SEM), the quantum states in these processions is found and discussed. Anaverage grain size of 30 nm or so is obtained.

Key words: Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapidthermal annealing (RTA), from X-ray diffraction (XRD), micro-Raman scattering and scanningelectronic microscope (SEM), the quantum states in these processions is found and discussed. Anaverage grain size of 30 nm or so is obtained.

CLC Number:

O484

JIN Rui-min;LUO Peng-hui;CHEN Lan-li;GUO Xin-feng;LU Jing-xiao. Quantum States in Fabricating Poly-Si Thin Film by Rapid Thermal Annealing[J]. Journal of Synthetic Crystals, 2008, 37(5): 1195-1198.

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Quantum States in Fabricating Poly-Si Thin Film by Rapid Thermal Annealing

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