Mg Doped p-Cladding AlInP Layer with Window-strucure High Power 660 nm(3.7 W) AlGaInP Broad Area Laser Diodes

JOURNAL OF SYNTHETIC CRYSTALS ›› 2009, Vol. 38 ›› Issue (3): 597-601.

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Mg Doped p-Cladding AlInP Layer with Window-strucure High Power 660 nm(3.7 W) AlGaInP Broad Area Laser Diodes

MA De-ying;LI Pei-xu;XIA Wei;LI Shu-qiang;TANG Qing-min;ZHANG Xin;REN Zhong-xiang;XU Xian-gang

Online:2009-06-15 Published:2021-01-20

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TN365

MA De-ying;LI Pei-xu;XIA Wei;LI Shu-qiang;TANG Qing-min;ZHANG Xin;REN Zhong-xiang;XU Xian-gang. Mg Doped p-Cladding AlInP Layer with Window-strucure High Power 660 nm(3.7 W) AlGaInP Broad Area Laser Diodes[J]. Journal of Synthetic Crystals, 2009, 38(3): 597-601.

Mg Doped p-Cladding AlInP Layer with Window-strucure High Power 660 nm(3.7 W) AlGaInP Broad Area Laser Diodes

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