Numerical Modelling of GaN Growth in Radial Flow MOCVD Reactor with Three-separate Vertical Inlets

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2009, Vol. 38 ›› Issue (4): 938-942.

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Numerical Modelling of GaN Growth in Radial Flow MOCVD Reactor with Three-separate Vertical Inlets

ZHANG Hong;ZUO Ran

Online:2009-08-15 Published:2021-01-20

Abstract

CLC Number:

TN304

ZHANG Hong;ZUO Ran. Numerical Modelling of GaN Growth in Radial Flow MOCVD Reactor with Three-separate Vertical Inlets[J]. Journal of Synthetic Crystals, 2009, 38(4): 938-942.

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Numerical Modelling of GaN Growth in Radial Flow MOCVD Reactor with Three-separate Vertical Inlets

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