Abstract: The BaM ferrite films with fine grain size as small as 30 nm were prepared by reactive RF diode sputtering method, using alternate depositing process. It is found that two step annealing process is beneficial for films to form perpendicular orientation structures, which were identified by microstructure measurement such as X-ray diffraction pattern (XRD), conversion electron Mssbauer spectra (CEMS) and atomic force microscope(AFM).

Key words: The BaM ferrite films with fine grain size as small as 30 nm were prepared by reactive RF diode sputtering method, using alternate depositing process. It is found that two step annealing process is beneficial for films to form perpendicular orientation structures, which were identified by microstructure measurement such as X-ray diffraction pattern (XRD), conversion electron Mssbauer spectra (CEMS) and atomic force microscope(AFM).