Abstract: Intrinsic microcrystalline silicon thin films were deposited by VHF PECVD, the activation energy of thin films were measured by activation energy testing equipment. The activation energy of samples with different crystalline volume fractions prepared at different power and different pressure were studied. The results showed that the activation energy of samples deposited at amorphous/microcrystalline transition zone decreased as the crystalline volume fractions increasing. As the depositing power and pressure increasing, the depositing rates and activation energy were also increased. As a result, oxygen contamination could be suppressed by increasing depositing rates using relatively higher power and pressure.

Key words: Intrinsic microcrystalline silicon thin films were deposited by VHF PECVD, the activation energy of thin films were measured by activation energy testing equipment. The activation energy of samples with different crystalline volume fractions prepared at different power and different pressure were studied. The results showed that the activation energy of samples deposited at amorphous/microcrystalline transition zone decreased as the crystalline volume fractions increasing. As the depositing power and pressure increasing, the depositing rates and activation energy were also increased. As a result, oxygen contamination could be suppressed by increasing depositing rates using relatively higher power and pressure.