Effect of Growth Temperature on Growth Mode and Size of Ge Nanodots Prepared on SiO2 Surface by Magnetron Sputtering

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2010, Vol. 39 ›› Issue (4): 961-965.

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Effect of Growth Temperature on Growth Mode and Size of Ge Nanodots Prepared on SiO2 Surface by Magnetron Sputtering

XIA Zhong-gao;WANG Chong;LU Zhi-quan;LI Liang;YANG Yu

Online:2010-08-15 Published:2021-01-20

Abstract

CLC Number:

O484.1

XIA Zhong-gao;WANG Chong;LU Zhi-quan;LI Liang;YANG Yu. Effect of Growth Temperature on Growth Mode and Size of Ge Nanodots Prepared on SiO2 Surface by Magnetron Sputtering[J]. Journal of Synthetic Crystals, 2010, 39(4): 961-965.

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Effect of Growth Temperature on Growth Mode and Size of Ge Nanodots Prepared on SiO2 Surface by Magnetron Sputtering

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