Theoretical Calculation on Resistivity of Float-Zone Silicon Single Crystal Using Gas Doping

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2013, Vol. 42 ›› Issue (3): 456-460.

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Theoretical Calculation on Resistivity of Float-Zone Silicon Single Crystal Using Gas Doping

QU Xiang;CHEN Hai-bin;FANG Feng;WANG Li-du;ZHOU Qi-gang;YAN Zhi-rui

Online:2013-03-15 Published:2021-01-20

Abstract

CLC Number:

O734

QU Xiang;CHEN Hai-bin;FANG Feng;WANG Li-du;ZHOU Qi-gang;YAN Zhi-rui. Theoretical Calculation on Resistivity of Float-Zone Silicon Single Crystal Using Gas Doping[J]. Journal of Synthetic Crystals, 2013, 42(3): 456-460.

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Theoretical Calculation on Resistivity of Float-Zone Silicon Single Crystal Using Gas Doping

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