Cross-sectional Microscopy Detection Technology for Subsurface Damage of Fixed Abrasive Lapped SiC Wafers

JOURNAL OF SYNTHETIC CRYSTALS ›› 2013, Vol. 42 ›› Issue (5): 906-910.

Previous Articles Next Articles

Cross-sectional Microscopy Detection Technology for Subsurface Damage of Fixed Abrasive Lapped SiC Wafers

ZHANG Yin-xia;YANG Le-le;GAO Wei;SU Jian-xiu

Online:2013-05-15 Published:2021-01-20

Abstract

CLC Number:

TN305.1

ZHANG Yin-xia;YANG Le-le;GAO Wei;SU Jian-xiu. Cross-sectional Microscopy Detection Technology for Subsurface Damage of Fixed Abrasive Lapped SiC Wafers[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2013, 42(5): 906-910.

[1]	DENG Hong-fei;YUAN Zheng;XIE Xu-hui;ZHOU Lin;HU Hao. Simulation Research on Temperature Field of KDP Crystal and Technical Parameters Optimization in Ion Beam Figuring [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2015, 44(10): 2708-2713.
[2]	WANG Jian-bin;ZHU Yong-wei;WANG Jia-shun;XU Jun;ZUO Dun-wen. Effect of Lapping Methods on Subsurface Damage Depth of Single Crystal Sapphire [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2014, 43(5): 1099-1104.
[3]	ZHAI Yong-qing;WANG Li-li;CHEN Juan;LI Rui;MA Yu-zhu. Rapid Synthesis and Properties of Red Phosphors CaMoO4∶ Eu3+ by Microwave Radiation Method [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2012, 41(5): 1216-1220.
[4]	DU Jia-xi;SU Jian-xiu;WANG Zhan-he;MA Li-je;KANG Ren-ke. Formation Mechanism of Non-uniformity on Material Removal in Chemical Mechanical Polishing of Hard and Brittle Crystal Substrate [J]. JOURNAL OF SYNTHETIC CRYSTALS, 2012, 41(4): 1130-1137.

Cross-sectional Microscopy Detection Technology for Subsurface Damage of Fixed Abrasive Lapped SiC Wafers

PDF (PC)

Knowledge

Abstract

Cite this article

share this article

References

Related Articles 4

Recommended Articles

Metrics

Comments