Homoepitaxial Growth of High Quality GaN Films by MOCVD

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2013, Vol. 42 ›› Issue (5): 915-917.

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Homoepitaxial Growth of High Quality GaN Films by MOCVD

LI Liang;LI Zhong-hui;LUO Wei-ke;DONG Xun;PENG Da-qing;ZHANG Dong-guo

Online:2013-05-15 Published:2021-01-20

Abstract

CLC Number:

TN304

LI Liang;LI Zhong-hui;LUO Wei-ke;DONG Xun;PENG Da-qing;ZHANG Dong-guo. Homoepitaxial Growth of High Quality GaN Films by MOCVD[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2013, 42(5): 915-917.

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Homoepitaxial Growth of High Quality GaN Films by MOCVD

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