Improvement of Low Tmperature GaN Interlayer on the Property of the Two-dimensional Electron Gas in AlGaN/GaN Heterostructure

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2013, Vol. 42 ›› Issue (7): 1406-1409.

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Improvement of Low Tmperature GaN Interlayer on the Property of the Two-dimensional Electron Gas in AlGaN/GaN Heterostructure

ZHANG Dong-guo;LI Zhong-hui;PENG Da-qing;DONG Xun;LI Liang;NI Jin-yu

Online:2013-07-15 Published:2021-01-20

Abstract

CLC Number:

TN304

ZHANG Dong-guo;LI Zhong-hui;PENG Da-qing;DONG Xun;LI Liang;NI Jin-yu. Improvement of Low Tmperature GaN Interlayer on the Property of the Two-dimensional Electron Gas in AlGaN/GaN Heterostructure[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2013, 42(7): 1406-1409.

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Improvement of Low Tmperature GaN Interlayer on the Property of the Two-dimensional Electron Gas in AlGaN/GaN Heterostructure

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