[1] |
KE Haipeng, OU Xuewen, KE Shaoying.
Effect of He Ion Implantation on the Defect Behaviour in Ge
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(12): 2244-2251.
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[2] |
SHEN Bo;YANG Xuelin;XU Fujun.
Large Lattice-Mismatched Heteroepitaxial Growth of Nitride Wide Bandgap Semiconductors by MOCVD
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 1953-1969.
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[3] |
ZHANG Yumin;WANG Jianfeng;CAI Demin;XU Yu;WANG Mingyue;HU Xiaojian;XU Lin;XU Ke.
Progress on GaN Single Crystal Substrate Grown by Hydride Vapor Phase Epitaxy
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 1970-1983.
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[4] |
JIANG Yuanxi;LIU Nanliu;ZHANG Fabi;WANG Qi;ZHANG Guoyi.
Development and Trends of GaN Single Crystal Substrate Fabrication Technology
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2038-2045.
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[5] |
BEN Jianwei;SUN Xiaojuan;JIANG Ke;CHEN Yang;SHI Zhiming;ZANG Hang;ZHANG Shanli;LI Dabing;LYU Wei.
AlGaN Based Wide Bandgap Photoelectric Materials and Devices
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2046-2067.
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[6] |
BAI Song;LI Shiyan;FEI Chenxi;LIU Qiang;JIN Xiaoxing;HAO Fengbin;HUANG Runhua;YANG Yong.
Development of New-Generation SiC Power MOSFET
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2122-2127.
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[7] |
FENG Gan;SUN Yongqiang;QIAN Weining;CHEN Zhixia.
Progress in Homoepitaxial Growth of 4H-SiC Semiconductor
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2128-2138.
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[8] |
WANG Yanfeng;WANG Hongxing.
Research Progress of MPCVD Single Crystal Diamond Growth and Diamond Electronic Devices
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2139-2152.
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[9] |
GUO Xing;WANG Guangxu;XU Longquan;XIONG Xinhua;YANG Junning;ZHANG Jianli;JIANG Fengyi.
Research on Performance and Application of Silicon Based Golden Light LED Device
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2161-2168.
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[10] |
YANG Shu;HAN Shaowen;LI Yanjun;LI Shaocheng;SHENG Kuang.
High-Performance Vertical GaN-on-GaN Rectifiers
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2169-2177.
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[11] |
YUAN Ziyuan;PAN Rui;XIA Shunji;WEI Lian;YE Jiajia;LI Chen;CHEN Yanfeng;LU Hong.
Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2178-2193.
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[12] |
ZHANG Jin;HU Zhuangzhuang;MU Wenxiang;TIAN Xusheng;FENG Qian;JIA Zhitai;ZHANG Jincheng;TAO Xutang;HAO Yue.
High Qualityβ-Ga2 O3 Single Crystal and Fabrication of Schottky Diode
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2194-2199.
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[13] |
CHENG Hongjuan;JIN Lei;WU Honglei;QI Haitao;WANG Zenghua;SHI Yuezeng;ZHANG Li.
Growth Behavior of AlN Single Crystal
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2200-2205.
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[14] |
HU Jichao;WANG Xi;JIA Renxu;PU Hongbin;CHEN Zhiming.
New Type of Triangular Defects in 4H-SiC 4°Off-Axis Homoepitaxial Layers
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(11): 2206-2210.
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[15] |
HU Dewei;TANG Anjiang;TANG Shiyun;WEI Deju;TIAN Hexin.
Research Progress on Preparation and Application of Silicon Nanowires
[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2020, 49(9): 1743-1751.
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