Effect of AlGaN Nucleation Layer on the Stress and Dislocation of the GaN Film Grown on SiC Substrate

JOURNAL OF SYNTHETIC CRYSTALS ›› 2014, Vol. 43 ›› Issue (6): 1346-1350.

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Effect of AlGaN Nucleation Layer on the Stress and Dislocation of the GaN Film Grown on SiC Substrate

XU Ming-sheng;HU Xiao-bo;XU Xian-gang

Online:2014-06-15 Published:2021-01-20

Abstract

CLC Number:

O474

XU Ming-sheng;HU Xiao-bo;XU Xian-gang. Effect of AlGaN Nucleation Layer on the Stress and Dislocation of the GaN Film Grown on SiC Substrate[J]. Journal of Synthetic Crystals, 2014, 43(6): 1346-1350.

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Effect of AlGaN Nucleation Layer on the Stress and Dislocation of the GaN Film Grown on SiC Substrate

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