Optimization of Process Parameters for SiNx∶ H Films Deposited by PECVD Method through Orthogonal Experimental Design

JOURNAL OF SYNTHETIC CRYSTALS ›› 2014, Vol. 43 ›› Issue (8): 1913-1920.

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Optimization of Process Parameters for SiNx∶ H Films Deposited by PECVD Method through Orthogonal Experimental Design

WU Xiao-song;CHU Xue-ning;LI Yu-peng

Online:2014-08-15 Published:2021-01-20

Abstract

CLC Number:

TQ153.1
TP391.7

WU Xiao-song;CHU Xue-ning;LI Yu-peng. Optimization of Process Parameters for SiNx∶ H Films Deposited by PECVD Method through Orthogonal Experimental Design[J]. Journal of Synthetic Crystals, 2014, 43(8): 1913-1920.

Optimization of Process Parameters for SiNx∶ H Films Deposited by PECVD Method through Orthogonal Experimental Design

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