Effect of Sn Doping on Dislocation and Minority Carrier Lifetime of Directional Solidified mc-Si

JOURNAL OF SYNTHETIC CRYSTALS ›› 2016, Vol. 45 ›› Issue (6): 1458-1464.

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Effect of Sn Doping on Dislocation and Minority Carrier Lifetime of Directional Solidified mc-Si

HE Qiu-xiang;LI Jing-wei;SUN Ji-fei;BAI Xiao-long;XIONG Zhen;CHEN Jian

Online:2016-06-15 Published:2021-01-20

Abstract

CLC Number:

TM914.4+1

HE Qiu-xiang;LI Jing-wei;SUN Ji-fei;BAI Xiao-long;XIONG Zhen;CHEN Jian. Effect of Sn Doping on Dislocation and Minority Carrier Lifetime of Directional Solidified mc-Si[J]. Journal of Synthetic Crystals, 2016, 45(6): 1458-1464.

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Effect of Sn Doping on Dislocation and Minority Carrier Lifetime of Directional Solidified mc-Si

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