Abstract: The annealing process of silicon controlled rectifier ( SCR) after irradiation were studied. SCR wafer was irradiated by 1. 4 MeV electronic beam with fixed fluence rates. Then the triggering current and minority carrier lifetime of SCR were measured. The experimental results show that the value of minority carrier lifetime is decrease and the value of triggering current is increase after irradiation. After annealing at 350℃, the triggering current of SCR was recovered to the level before irradiation. The minority carrier lifetime was recovered, but the value was far lower than that before irradiation. In irradiation fluence range of the experiment, the k was constant. After annealing process, the k coefficient was related to irradiation fluence. Under low irradiation fluence, the k coefficient was small. Storage at room temperature brought large influence on the irradiation effect of SCR. Long time storage had favorable influence on the annealing effect at 300 ℃, and unfavorable influence on the annealing effect at 200 ℃.

Key words: The annealing process of silicon controlled rectifier ( SCR) after irradiation were studied. SCR wafer was irradiated by 1. 4 MeV electronic beam with fixed fluence rates. Then the triggering current and minority carrier lifetime of SCR were measured. The experimental results show that the value of minority carrier lifetime is decrease and the value of triggering current is increase after irradiation. After annealing at 350℃, the triggering current of SCR was recovered to the level before irradiation. The minority carrier lifetime was recovered, but the value was far lower than that before irradiation. In irradiation fluence range of the experiment, the k was constant. After annealing process, the k coefficient was related to irradiation fluence. Under low irradiation fluence, the k coefficient was small. Storage at room temperature brought large influence on the irradiation effect of SCR. Long time storage had favorable influence on the annealing effect at 300 ℃, and unfavorable influence on the annealing effect at 200 ℃.