Abstract: The PECVD reaction chamber's fluid and heat transfer model were established,the influence of process parameters and showerhead plate structures on the heat and flow distribution were studied.Based on the typical process parameters,simulations were designed according to single variable principle to study the influence of process parameters on the velocity,pressure and temperature distribution above wafer.The simulation results show that,under different process parameters:the distribution of velocity is linear with radius;the fluctuation of temperature is small and shows good stability;pressure is distributed approximately parabolic along with radius with higher pressure in the center.In addition,the effect of showerhead plate's flow resistance distribution on the heat and flow distribution were studied by designing two sets of simulations.The results show that the velocity on the edge of heat plate remains unchanged for different flow resistance distributions,but there is a turning point in the velocity distribution and velocity is linearly distributed before and after the turning point.So,it can be concluded that the velocity distribution above wafer can be controlled to acquire higher deposition uniformity by changing the flow resistance distribution of showerhead plate.

Key words: The PECVD reaction chamber's fluid and heat transfer model were established,the influence of process parameters and showerhead plate structures on the heat and flow distribution were studied.Based on the typical process parameters,simulations were designed according to single variable principle to study the influence of process parameters on the velocity,pressure and temperature distribution above wafer.The simulation results show that,under different process parameters:the distribution of velocity is linear with radius;the fluctuation of temperature is small and shows good stability;pressure is distributed approximately parabolic along with radius with higher pressure in the center.In addition,the effect of showerhead plate's flow resistance distribution on the heat and flow distribution were studied by designing two sets of simulations.The results show that the velocity on the edge of heat plate remains unchanged for different flow resistance distributions,but there is a turning point in the velocity distribution and velocity is linearly distributed before and after the turning point.So,it can be concluded that the velocity distribution above wafer can be controlled to acquire higher deposition uniformity by changing the flow resistance distribution of showerhead plate.