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JOURNAL OF SYNTHETIC CRYSTALS ›› 2017, Vol. 46 ›› Issue (6): 1072-1077.

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Study on Opto-Electrical Properties of Cu Thin Films Deposited by Magnetron Sputtering

FAN Zhi-qin;HE Yuan-yuan;LI Rui   

  • Online:2017-06-15 Published:2021-01-20

Abstract: Cu Thin films were prepared by magnetron sputtering on K9 optical glass substrate based on orthogonal test, and the effects of sputtering time, substrate temperature, and argon flow rate on the optical properties and electrical properties of copper films were studied.The research show that the transmission spectrum of Cu thin films has obvious absorption peak at 362 nm, but the absorption is weak in visible light, indicating that the Cu thin film is transparent to visible light.The transmittance decreases as the film thickness increases.The resistivity decreases with the increase of the film thickness, and the resistivity value changes rapidly when the thickness of Cu thin film is less than 1100 nm.When the thickness of Cu thin film is more than 1100 nm, the resistivity changes slowly to the fixed value.When the sputtering time is 25 min, the substrate temperature is 300 ℃ and the argon flow rate is 6.9 sccm, the obtained sample has not absorption peak in the ultraviolet-visible region and has good conductivity.

Key words: Cu Thin films were prepared by magnetron sputtering on K9 optical glass substrate based on orthogonal test, and the effects of sputtering time, substrate temperature, and argon flow rate on the optical properties and electrical properties of copper films were studied.The research show that the transmission spectrum of Cu thin films has obvious absorption peak at 362 nm, but the absorption is weak in visible light, indicating that the Cu thin film is transparent to visible light.The transmittance decreases as the film thickness increases.The resistivity decreases with the increase of the film thickness, and the resistivity value changes rapidly when the thickness of Cu thin film is less than 1100 nm.When the thickness of Cu thin film is more than 1100 nm, the resistivity changes slowly to the fixed value.When the sputtering time is 25 min, the substrate temperature is 300 ℃ and the argon flow rate is 6.9 sccm, the obtained sample has not absorption peak in the ultraviolet-visible region and has good conductivity.

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