Abstract: The p-type microcrystalline silicon oxide (p-uc-SiOx) thin-film window layers were deposited by using VHF-PECVD technique,the optical and electrical properties of p-uc-SiOx films with variable borane doping rate were discussed.The UV-vis,Raman,FTIR and dark conductivity tests were utilized to investigate the optical and electrical properties of these films.The results showed that the p-uc-SiOx materials appeared to be in microcrystalline state,which between amorphous and crystalline.The crystal fraction decreased with increasing borane doping rate.At the same time,dark conductivity showed a sharp dropdown and the optical band gap decreased steadly.The crystallizing process was depressed with more boron atom incorporating into the materials.The decreased effective doping caused lower dark conductivity,on the other hand,the suppressed phase separation of silicon and silicon oxide was responsible for the result of lower optical band gap.The sample with 0.4; doping rate show a very high conductivity of 0.158 S/cm and optical band gap of 2.2 eV,it is a sutiable candicate of the windower layer with high optical band gap and good conducitivity for silicon thin film solar cells.

Key words: The p-type microcrystalline silicon oxide (p-uc-SiOx) thin-film window layers were deposited by using VHF-PECVD technique,the optical and electrical properties of p-uc-SiOx films with variable borane doping rate were discussed.The UV-vis,Raman,FTIR and dark conductivity tests were utilized to investigate the optical and electrical properties of these films.The results showed that the p-uc-SiOx materials appeared to be in microcrystalline state,which between amorphous and crystalline.The crystal fraction decreased with increasing borane doping rate.At the same time,dark conductivity showed a sharp dropdown and the optical band gap decreased steadly.The crystallizing process was depressed with more boron atom incorporating into the materials.The decreased effective doping caused lower dark conductivity,on the other hand,the suppressed phase separation of silicon and silicon oxide was responsible for the result of lower optical band gap.The sample with 0.4; doping rate show a very high conductivity of 0.158 S/cm and optical band gap of 2.2 eV,it is a sutiable candicate of the windower layer with high optical band gap and good conducitivity for silicon thin film solar cells.