Annealing Crystallization Characteristics of Amorphous In-Ga-Zn-O Films Induced by SiNX Capping Layers

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JOURNAL OF SYNTHETIC CRYSTALS ›› 2019, Vol. 48 ›› Issue (5): 907-912.

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Annealing Crystallization Characteristics of Amorphous In-Ga-Zn-O Films Induced by SiNX Capping Layers

HU Hao-wei;JING Jin-yu;LI Qin;SONG Zhong-xiao

Online:2019-05-15 Published:2021-01-20

Abstract

CLC Number:

TB43

HU Hao-wei;JING Jin-yu;LI Qin;SONG Zhong-xiao. Annealing Crystallization Characteristics of Amorphous In-Ga-Zn-O Films Induced by SiNX Capping Layers[J]. Journal of Synthetic Crystals, 2019, 48(5): 907-912.

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Annealing Crystallization Characteristics of Amorphous In-Ga-Zn-O Films Induced by SiNX Capping Layers

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