Investigation of Improving a-Si∶H/c-Si Interface Passivation Quality by Hydrogen Plasma Treatment Process

JOURNAL OF SYNTHETIC CRYSTALS ›› 2019, Vol. 48 ›› Issue (10): 1912-1919.

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Investigation of Improving a-Si∶H/c-Si Interface Passivation Quality by Hydrogen Plasma Treatment Process

WANG Nan;ZHONG Qi;ZHOU Yu-qin

Online:2019-10-15 Published:2021-01-20

Abstract

CLC Number:

TM914.4+1

WANG Nan;ZHONG Qi;ZHOU Yu-qin. Investigation of Improving a-Si∶H/c-Si Interface Passivation Quality by Hydrogen Plasma Treatment Process[J]. Journal of Synthetic Crystals, 2019, 48(10): 1912-1919.

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Investigation of Improving a-Si∶H/c-Si Interface Passivation Quality by Hydrogen Plasma Treatment Process

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