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JOURNAL OF SYNTHETIC CRYSTALS ›› 2021, Vol. 50 ›› Issue (3): 447-453.

• Research Articles • Previous Articles     Next Articles

High-Order Mixing Effects on EPR g-factors for Er3+ Doped Bi4Ge3O12 Crystals

HAO Danhui1, CHAI Ruipeng2, LIANG Liang2   

  1. 1. Department of Physics, Xi'an University of Architecture and Technology Hua Qing College, Xi'an 710043, China;
    2. College of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China
  • Received:2020-12-16 Online:2021-03-15 Published:2021-04-15

Abstract: Stark levels and EPR parameters of Er3+ doped in Bi4Ge3O12 crystal were studied by diagonalizing 364×364 complete energy matrices. Simultaneously, the crystal-field and J-J mixing effects on the EPR g-factors from the higher lying manifolds were evaluated, quantitatively. The results indicate that the dominant J-J mixing contribution from manifold 2K15/2 accounts for about 2.5% for the Er3+. However, the most significant high-order mixing effect is from the crystal-field admixture between the first excited manifold 4I13/2 and ground manifold 4I15/2, where the contribution to g is almost twice as much as that to g// (0.21% for g, 0.092% for g//).The other crystal-field and J-J mixing effects from the higher lying manifolds can be neglected. Therefore, only considering the contribution of ground manifold 4I15/2 to EPR g-factor is a good approximation for the complex system doped with Er3+ ions.

Key words: Er3+, Bi4Ce3O12, crystal-field effect, J-J mixing effect, EPR g-factor

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