High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source

JOURNAL OF SYNTHETIC CRYSTALS ›› 2021, Vol. 50 ›› Issue (4): 757-761.

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High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source

LIU Peng^1,2,3, ZHU Zhen², CHEN Kang², WANG Rongkun¹, XIA Wei^2,3, XU Xiangang^1,2

1. Institute of Novel Semiconductors, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China;
2. Shandong Huaguang Optoelectronics Co., Ltd., Jinan 250101, China;
3. School of Physics and Technology, University of Jinan, Jinan 250022, China

Received:2021-03-01 Online:2021-04-15 Published:2021-05-21

Abstract

Abstract: For 808 nm high power laser used as pump source, Al-free active-region laser diode was designed and fabricated, consisting of InGaAsP/GaInP. In this work, a double asymmetric structure of cladding and waveguide layers to reduce the thermal resistance and optical loss of P-side layers were proposed. By optimizing the MOCVD growth of As and P hybrid material, InGaAsP single-crystal epitaxial film with steep interface was fabricated. The threshold current is 1.5 A at room temperature and the slope efficiency is 1.26 W/A. The output power is 10.5 W at 10 A and the power efficiency is 58%. Under continuous wave (CW) operation, the maximum output power is 23 W@24.5 A, while it can reach 54 W@50 A under quasi continuous wave (QCW) mode without catastrophic optical damage (COD). No power degradation or COD occurred for accelerated aging over 4 200 h at 15 A, showing high long-term reliability of Al-free active-region 808 nm laser diode.

Key words: Al-free material, high reliabile, InGaAsP, 808 nm, asymmetric, pump source, semiconductor laser diode

CLC Number:

TN248.4

LIU Peng, ZHU Zhen, CHEN Kang, WANG Rongkun, XIA Wei, XU Xiangang. High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(4): 757-761.

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High Reliable Al-Free 808 nm Semiconductor Laser Diode Pump Source

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