Effect of GaAs Substrate Temperature on Indium Droplets Grown by Droplet Epitaxy

Abstract

Abstract: Indium droplets were grown on GaAs(001) substrates by droplet epitaxy method. The samples grown at different temperatures were characterized by atomic force microscope (AFM), and the surface morphology was observed. The study illustrates that indium droplets are very sensitive to the substrate temperature. The droplet density decreases with the increase of the substrate temperature, and its size increases with the increase of the substrate temperature. The physical mechanism of indium droplet formation at different substrate temperatures was analyzed, and the reason was explained. According to the relationship between the maximal cluster density and substrate temperature in nucleation theory, the functional relationship between the density of indium droplets and the substrate temperature is calculated as n_x=5.17 exp(0.69 eV/kT).

Key words: GaAs, indium droplet, droplet epitaxy, substrate temperature, cluster density

CLC Number:

TN304

HUANG Zechen, JIANG Chong, LI Ershi, LI Jiawei, SONG Juan, WANG Yi, GUO Xiang, LUO Zijiang, DING Zhao. Effect of GaAs Substrate Temperature on Indium Droplets Grown by Droplet Epitaxy[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(8): 1431-1437.

References

[1] CASTELVECCHI D. Quantum computers ready to leap out of the lab in 2017[J]. Nature, 2017, 541(7635): 9-10.
[2] SHIELDS, ANDREW J. Semiconductor quantum light sources[J]. Nature Photonics, 2007, 1(4): 215-223.
[3] LYTVYN P M, MAZUR Y I, BENAMARA M, et al. Temperature driven three-dimensional ordering of InGaAs/GaAs quantum dot superlattices grown under As₂ gas flux[J]. Applied Surface Science, 2014, 305: 689-696.
[4] LEDENTSOV N N. Quantum dot laser[J]. Semiconductor Science and Technology, 2011, 26(1): 014001.
[5] 张之桓,丁召,王一,等.AlGaAs插入层对InAs/AlGaAs/GaAs量子点的尺寸分布影响[J].贵州大学学报(自然科学版),2018,35(3):39-43.
ZHANG Z H, DING Z, WANG Y, et al. The effect of AlGaAs cladding layer on size distribution of InAs/AlGaAs/GaAs quantum dots[J]. Journal of Guizhou University (Natural Sciences), 2018, 35(3): 39-43(in Chinese).
[6] MICHLER P. Quantum dots for quantum information technologies[M]. Cham: Springer International Publishing, 2017.
[7] AKOPIAN N, LINDNER N H, POEM E, et al. Entangled photon pairs from semiconductor quantum dots[J]. Physical Review Letters, 2006, 96(13): 130501.
[8] KLOEFFEL C, LOSS D. Prospects for spin-based quantum computing in quantum dots[J]. Annual Review of Condensed Matter Physics, 2013, 4(1): 51-81.
[9] RAU M, HEINDEL T, UNSLEBER S, et al. Free space quantum key distribution over 500 meters using electrically driven quantum dot single-photon sources: a proof of principle experiment[J]. New Journal of Physics, 2014, 16(4): 043003.
[10] KOGUCHI N, TAKAHASHI S, CHIKYOW T. New MBE growth method for InSb quantum well boxes[J]. Journal of Crystal Growth, 1991, 111(1/2/3/4): 688-692.
[11] STOCK E, WARMING T, OSTAPENKO I, et al. Single-photon emission from InGaAs quantum dots grown on (111) GaAs[J]. Applied Physics Letters, 2010, 96(9): 093112.
[12] HA N, MANO T, KURODA T, et al. Current-injection quantum-entangled-pair emitter using droplet epitaxial quantum dots on GaAs(111)A[J]. Applied Physics Letters, 2019, 115(8): 083106.
[13] YU P, WU J, GAO L, et al. InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy[J]. Solar Energy Materials and Solar Cells, 2017, 161: 377-381.
[14] AHMAD KAMARUDIN M, HAYNE M, ZHUANG Q D, et al. GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer[J]. Journal of Physics D: Applied Physics, 2010, 43(6): 065402.
[15] LABELLA V P, BULLOCK D W, EMERY C, et al. Enabling electron diffraction as a tool for determining substrate temperature and surface morphology[J]. Applied Physics Letters, 2001, 79(19): 3065-3067.
[16] VOORHEES P W. The theory of Ostwald ripening[J]. Journal of Statistical Physics, 1985, 38(1/2): 231-252.
[17] Schmidt O. Lateral aligment of epitaxial quantum dots[M]. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007.
[18] VENABLES J A, PERSAUD R, METCALFE F L, et al. Rate and diffusion analyses of surface processes[J]. Journal of Physics and Chemistry of Solids, 1994, 55(10): 955-964.
[19] VOOK R W. Nucleation and growth of thin films[J]. Optical Engineering, 1984, 23(3): 343-349.
[20] WALTON D. Nucleation of vapor deposits[J]. The Journal of Chemical Physics, 1962, 37(10): 2182-2188.
[21] KIRAVITTAYA S, RASTELLI A, SCHMIDT O G. Advanced quantum dot configurations[J]. Reports on Progress in Physics, 2009, 72(4): 046502.