Effect of Nitrogen Doping on the Perfomances of the Hydrogen Terminated Diamond RF Transistors

Abstract

Abstract: The microwave plasma chemical vapor deposition technology was employed to grow the single crystal diamond substrates with different crystalline qualities by changing the nitrogen content in the gas source. The sample size was controlled at 5 mm×5 mm×0.5 mm by laser cutting and polishing. The surfaces of diamond substrates were hydrogenated and the diamond RF transistors were fabricated on them. The influence of the nitrogen content on the crystalline quality of the diamond and the performance of the device has been systematically studied. With the increase of the nitrogen content, although the growth rate of the single crystal diamond increases, the FWHM of Raman and XRD rocking curves, as well as the corresponding NV defects in the photoluminescence spectra also gradually increases, indicating that the crystalline quality became worse, which not only degrade the carrier mobility of the channels, but also make the diamond RF transistor suffer from the problems of current collapse and performance degradations. By reducing the nitrogen content and improving the crystalline quality of the diamond, the carrier mobility significantly increases, the current gain cutoff frequency f_T and power gain cutoff frequency f_max significantly increases from 17 GHz and 22 GHz to 32 GHz and 53 GHz, respectively.

Key words: nitrogen content, MPCVD, crystalline quality, hydrogen-terminal diamond, channel carrier mobility, current collapse, diandimond RF transistor, frequency performance

CLC Number:

TN304
TQ163

LIU Xiaochen, YU Xinxin, GE Xingang, JIANG Long, LI Yifeng, AN Xiaoming, GUO Hui. Effect of Nitrogen Doping on the Perfomances of the Hydrogen Terminated Diamond RF Transistors[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2021, 50(11): 2045-2052.

References

[1] BALMER R S, BRANDON J R, CLEWES S L, et al. Chemical vapour deposition synthetic diamond: materials, technology and applications[J]. Journal of Physics: Condensed Matter, 2009, 21(36): 364221.
[2] 孔月婵,杨扬,周建军,等.碳基射频电子器件研究进展[J].固体电子学研究与进展,2020,40(2):94-103+121.
KONG Y C, YANG Y, ZHOU J J, et al. Recent progress on carbon-based RF devices[J]. Research & Progress of SSE, 2020, 40(2): 94-103+121(in Chinese).
[3] SONG J, LI H D, LIN F, et al. Plasmon-enhanced photoluminescence of Si-V centers in diamond from a nanoassembled metal-diamond hybrid structure[J]. CrystEngComm, 2014, 16(36): 8356.
[4] SHIBATA T, KITAMOTO Y, UNNO K, et al. Micromachining of diamond film for MEMS applications[J]. Journal of Microelectromechanical Systems, 2000, 9(1): 47-51.
[5] ALBIN S, WATKINS L. Electrical properties of hydrogenated diamond[J]. Applied Physics Letters, 1990, 56(15): 1454-1456.
[6] KAWARADA H. High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation[J]. Japanese Journal of Applied Physics, 2012, 51: 090111.
[7] 杨名超.氢终端金刚石表面氧处理及金刚石场效应晶体管稳定性的研究[D].长春:吉林大学,2020.
YANG M C. Researches on oxygen treatment of hydrogen-termined diamond and stability of diamond field effect transistors[D]. Changchun: Jilin University, 2020(in Chinese).
[8] 王占国.半导体材料研究的新进展[J].半导体技术,2002,27(3):8-12+14.
WANG Z G. New progress of studies on semiconductor materials[J]. Semiconductor Technology, 2002, 27(3): 8-12+14(in Chinese).
[9] MAKI T, SHIKAMA S, KOMORI M, et al. Hydrogenating effect of single-crystal diamond surface[J]. Japanese Journal of Applied Physics, 1992, 31(Part 2, No. 10A): L1446-L1449.
[10] KAWARADA H, AOKI M, ITO M. Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds[J]. Applied Physics Letters, 1994, 65(12): 1563-1565.
[11] HIRAMA K, SATO H, HARADA Y, et al. Diamond field-effect transistors with 1.3 A/mm drain current density by Al₂O₃ passivation layer[J]. Japanese Journal of Applied Physics, 2012, 51: 090112.
[12] WANG C J, SHIH M H, CHEN L T. A wideband open-slot antenna with dual-band circular polarization[J]. IEEE Antennas and Wireless Propagation Letters, 2015, 14: 1306-1309.
[13] IMANISHI S, HORIKAWA K, OI N, et al. 3.8 W/mm RF power density for ALD Al₂O₃-based two-dimensional hole gas diamond MOSFET operating at saturation velocity[J]. IEEE Electron Device Letters, 2019, 40(2): 279-282.
[14] FENG Z H, WANG J J, HE Z Z, et al. Polycrystalline diamond MESFETs by Au-mask technology for RF applications[J]. Science China Technological Sciences, 2013, 56(4): 957-962.
[15] YU X X, ZHOU J J, QI C J, et al. A high frequency hydrogen-terminated diamond MISFET with f_T/f_max of 70/80 GHz[J]. IEEE Electron Device Letters, 2018, 39(9): 1373-1376.
[16] YU X X, ZHOU J J, ZHANG S, et al. High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz[J]. Applied Physics Letters, 2019, 115(19): 192102.
[17] YU X X, HU W X, ZHOU J J, et al. 1 W/mm output power density for H-terminated diamond MOSFETs with Al₂O₃/SiO₂ Bi-layer passivation at 2 GHz[J]. IEEE Journal of the Electron Devices Society, 2020, 9: 160-164.
[18] 杨鹏志.氢终端金刚石场效应管器件特性研究[D].西安:西安电子科技大学,2018.
YANG P Z. Research on the characteristics of H-terminated diamond field effect transistors[D]. Xi'an: Xidian University, 2018(in Chinese).
[19] 夏禹豪,耿传文,衡凡,等.MPCVD法中氮气对单晶金刚石生长机理影响的探究[J].真空科学与技术学报,2018,38(8):684-688.
XIA Y H, GENG C W, HENG F, et al. Impact of nitrogen concentration on monocrystalline diamond growth in microwave plasma chemical vapor deposition[J]. Chinese Journal of Vacuum Science and Technology, 2018, 38(8): 684-688(in Chinese).
[20] LU C H, LIU Q K, WANG Z T, et al. Preparation of CVD single crystal diamond and research of its infrared property[J]. Diamond and Abrasives Engineering, 2020, 40(06):20-24.
[21] HEI L F, LIU J, LI C M, et al. Fabrication and characterizations of large homoepitaxial single crystal diamond grown by DC arc plasma jet CVD[J]. Diamond and Related Materials, 2012, 30: 77-84.