Abstract: In this paper, single factor and orthogonal experiments were used to explore the influence of abrasive grain types, polishing slurry pH value, surfactant type, and abrasive grain size on the removal rate of C-plane sapphire chemical mechanical polishing materials. The test results show that: a higher material removal rate and a better surface morphology can obtained when using silica as abrasive particles; the material removal rate shows a trend of first increasing and then decreasing with the increase of the pH value of the polishing slurry, and the pH value of the 9 attachment can get a better removal rate; the material removal rate also increases with the increase of abrasive particle size; using triethanolamine (TEA) and cetyltrimethylammonium bromide (CTAB) as surfactants can get a higher material removal rate; the primary and secondary order of each test factor on the removal rate of sapphire wafer material is abrasive particle size, surfactant, polishing slurry pH value; when the abrasive particle size is 50 nm, the surfactant is CTAB, and the polishing slurry pH value is 9 can get higher material removal rate and better surface quality.

Key words: polishing slurry, single factor test, orthogonal test, material removal rate, chemical mechanical polishing(CMP), surfactant, sapphire processing