HPHT Synthesis of Boron Co-Doped Single Crystal Diamond

Abstract

Abstract: Diamond is a superhard and multi-functional material with excellent properties. Synthetic diamond can own unique properties by doping. Boron-doped diamond has both conductive characteristics of p-type semiconductor and excellent physical and chemical properties. It has wide application value in national defense, medical treatment, exploration, scientific research and other fields. Based on boron-doped diamond and boron co-doped diamond single crystals synthesized by high pressure and high temperature (HPHT) method in our laboratory, the synthesis and properties of boron-doped diamond, boron-hydrogen co-doped diamond and boron-nitrogen co-doped diamond are discussed. The influence of different additives on the synthesis properties of the synthetic diamonds through the optical and electrical characterization are analyzed, which provides some ideas for further synthesizing high-performance semiconductor diamonds.

Key words: boron-doped diamond, HPHT, superhard material, crystal growth, co-doping, Hall effect, semiconductor diamond

CLC Number:

TQ163

WANG Zhiwen, MA Hongan, CHEN Liangchao, CAI Zhenghao, JIA Xiaopeng. HPHT Synthesis of Boron Co-Doped Single Crystal Diamond[J]. Journal of Synthetic Crystals, 2022, 51(5): 830-840.

References

[1] LIANG Z Z, KANDA H, JIA X, et al. Synthesis of diamond with high nitrogen concentration from powder catalyst-C-additive NaN₃ by HPHT[J]. Carbon, 2006, 44(5): 913-917.
[2] UMEZAWA H, NAGASE M, KATO Y, et al. High temperature application of diamond power device[J]. Diamond and Related Materials, 2012, 24: 201-205.
[3] FANG S, MA HONGAN, CAI Z H, et al. Study on the characteristics of Ib diamond crystals synthesized with Fe₃O₄ doped in an Fe-Ni-C system[J]. CrystEngComm, 2020, 22(22): 3854-3862.
[4] FANG C, JIA X P, CHEN N, et al. Crystal growth and characterization of hydrogen-doped single diamond with Fe(C₅H₅)₂ additive[J]. Acta Physica Sinica, 2015, 64(12): 128101.
[5] HUMBLE P. The structure and mechanism of formation of platelets in natural type Ia diamond[J]. Proceedings of the Royal Society of London A Mathematical and Physical Sciences, 1982, 381(1780): 65-81.
[6] GEIS M W, TWICHELL J C, EFREMOW N N, et al. Comparison of electric field emission from nitrogen-doped, type Ib diamond, and boron-doped diamond[J]. Applied Physics Letters, 1996, 68(16): 2294-2296.
[7] 肖宏宇.优质克拉级金刚石大单晶的高温高压合成[D].长春:吉林大学,2010.
XIAO H Y. Growth of high-quality large diamond single crystals in carats grade under HPHT[D]. Changchun: Jilin University, 2010(in Chinese).
[8] KALISH R. The search for donors in diamond[J]. Diamond and Related Materials, 2001, 10(9/10): 1749-1755.
[9] SIDOROV V A, EKIMOV E A, BAUER E D, et al. Superconductivity in boron-doped diamond[J]. Diamond and Related Materials, 2005, 14(3/4/5/6/7): 335-339.
[10] EKIMOV E A, SIDOROV V A, BAUER E D, et al. Superconductivity in diamond[J]. Nature, 2004, 428(6982): 542-545.
[11] YANG N J, YU S Y, MACPHERSON J V, et al. Conductive diamond: synthesis, properties, and electrochemical applications[J]. Chemical Society Reviews, 2019, 48(1): 157-204.
[12] WOOD G F, ZVORISTE-WALTERS C E, MUNDAY M G, et al. High pressure high temperature synthesis of highly boron doped diamond microparticles and porous electrodes for electrochemical applications[J]. Carbon, 2021, 171: 845-856.
[13] PICKETT W E. Negative electron affinity and low work function surface: cesium on oxygenated diamond (100)[J]. Physical Review Letters, 1994, 73(12): 1664-1667.
[14] HEIM C, UREÑA DE VIVANCO M, RAJAB M, et al. Rapid inactivation of waterborne bacteria using boron-doped diamond electrodes[J]. International Journal of Environmental Science and Technology, 2015, 12(10): 3061-3070.
[15] RAJAB M, HEIM C, LETZEL T, et al. Electrochemical disinfection using boron-doped diamond electrode-the synergetic effects of in situ ozone and free chlorine generation[J]. Chemosphere, 2015, 121: 47-53.
[16] LI J H, WANG Q L, LIU Y F, et al. Boron/nitrogen co-doped diamond electrode for highly efficient electrochemistry detection of aniline[J]. Functional Diamond, 2021, 1(1): 135-142.
[17] CHEN Y H, GAO X L, LIU G S, et al. Correlation of the role of boron concentration on the microstructure and electrochemical properties of diamond electrodes[J]. Functional Diamond, 2021, 1(1): 197-204.
[18] LIU X B, CHEN X, SINGH D J, et al. Boron-oxygen complex yields n-type surface layer in semiconducting diamond[J]. Proceedings of the National Academy of Sciences of the United States of America, 2019, 116(16): 7703-7711.
[19] ZHOU D L, TANG L, GENG Y W, et al. First-principles calculation to n-type LiN co-doping and Li doping in diamond[J]. Diamond and Related Materials, 2020, 110: 108070.
[20] LI Z B, LI Y, WANG Y, et al. Synergistic effect in B and N co-doped Ⅰb-type diamond single crystal: a density function theory calculation[J]. Canadian Journal of Physics, 2016, 94(9): 929-932.
[21] WU Y Z, TONG J W, RUAN L X, et al. N-type diamond semiconductor induced by co-doping selenium and boron[J]. Computational Materials Science, 2021, 196: 110515.
[22] 马利秋.高温高压下掺硼宝石级金刚石的合成[D].长春:吉林大学,2009.
MA L Q. The synthesis of gem diamond crystals with boron-doped under HPHT[D]. Changchun: Jilin University, 2009 (in Chinese).
[23] 苗辛原.硼氮共掺杂金刚石的高温高压合成与杂质行为研究[D].长春:吉林大学,2020.
MIAO X Y. HPHT synthesis and impurities research of boron and nitrogen co-doped diamonds[D]. Changchun: Jilin University, 2020(in Chinese).
[24] BERNARD M, BARON C, DENEUVILLE A. About the origin of the low wave number structures of the Raman spectra of heavily boron doped diamond films[J]. Diamond and Related Materials, 2004, 13(4/5/6/7/8): 896-899.
[25] MORTET V, ŽIVCOVÁ Z V, TAYLOR A, et al. Insight into boron-doped diamond Raman spectra characteristic features[J]. Carbon, 2017, 115: 279-284.
[26] BLANK V D, DENISOV V N, KIRICHENKO A N, et al. Raman scattering by defect-induced excitations in boron-doped diamond single crystals[J]. Diamond and Related Materials, 2008, 17(11): 1840-1843.
[27] 赵占东.不同金属溶剂体系合成B-H共掺杂金刚石单晶[D].长春:吉林大学,2021.
ZHAO Z D. Synthesis of B-H co-doped diamond single crystals in differentmetal solvent systems[D]. Changchun: Jilin University, 2021(in Chinese).
[28] TEUKAM Z, CHEVALLIER J, SAGUY C, et al. Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers[J]. Nature Materials, 2003, 2(7): 482-486.
[29] 李勇. 氢协同掺杂大尺寸金刚石单晶的高温高压合成与表征[D].长春:吉林大学,2013.
LI Y. The synthesis and characterization of H co-doped diamond large single crystal under high pressure and high temperature[D]. Changchun: Jilin University, 2013(in Chinese).
[30] MAVRIN B N, DENISOV V N, POPOVA D M, et al. Boron distribution in the subsurface region of heavily doped Ⅱb type diamond[J]. Physics Letters A, 2008, 372(21): 3914-3918.
[31] BLANK V D, KUZNETSOV M S, NOSUKHIN S A, et al. The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond[J]. Diamond and Related Materials, 2007, 16(4/5/6/7): 800-804.
[32] 周振翔.多元掺杂体系下金刚石大单晶合成的研究[D].长春:吉林大学,2015.
ZHOU Z X. Study on the effect of several elements synergistic doped on the synthesis of large single diamond crystals[D]. Changchun: Jilin University, 2015(in Chinese).
[33] BOGDANOWICZ R, RYL J. Structural and electrochemical heterogeneities of boron-doped diamond surfaces[J]. Current Opinion in Electrochemistry, 2022, 31: 100876.
[34] LI R B. A molecular dynamics study of boron and nitrogen in diamond[J]. Solid State Communications, 2005, 135(3): 155-157.
[35] MIAO X Y, CHEN L C, MA H A, et al. High-pressure and high-temperature treatment of N-rich B-doped diamonds[J]. CrystEngComm, 2019, 21(26): 3961-3965.
[36] HU M H, BI N, LI S S, et al. Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions[J]. CrystEngComm, 2017, 19(31): 4571-4575.
[37] DE WEERDT F, COLLINS A T. Determination of the C defect concentration in HPHT annealed type ⅠaA diamonds from UV-VIS absorption spectra[J]. Diamond and Related Materials, 2008, 17(2): 171-173.
[38] MIAO X Y, MA H A, ZHANG Z F, et al. Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility[J]. Chinese Physics B, 2021, 30(6): 068102.
[39] FANG C, JIA X P, SUN S S, et al. Studying the effect of hydrogen on diamond growth by adding C₁₀H₁₀Fe under high pressures and high temperatures[J]. High Pressure Research, 2016, 36(1): 42-54.
[40] ZHANG H, LI S S, SU T C, et al. Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions[J]. Chinese Physics B, 2016, 25(11): 118104.
[41] ZHANG H, LI S S, SU T C, et al. Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature[J]. Chinese Physics B, 2017, 26(5): 058102.
[42] 陈宁.硫(氢)掺杂金刚石单晶的高压合成及金刚石色心研究[D].长春:吉林大学,2018.
CHEN N. Synthesis and color center research of S(H) doped diamond under high pressure[D]. Changchun: Jilin University, 2018(in Chinese).