Effect of Mechanical Grinding and Polishing on Resistive Switching Characteristics of CdZnTe Thin Films

Abstract

Abstract: CdZnTe thin films were prepared on ITO glass by magnetron sputtering method to explore the effect of mechanical grinding and polishing on the resistive switching characteristics of CdZnTe thin films. Through the analysis of experimental results such as XRD patterns, Raman spectroscopy, AFM micrograph, etc., the physical mechanism of mechanical grinding and polishing affecting the resistive switching characteristics of CdZnTe thin film was elucidated. The results show that the thin films prepared by magnetron sputtering are sphalerite structures with F43m space group. Mechanical grinding and polishing improves the crystallization quality of CdZnTe thin films; the roughness (Ra) of CdZnTe film decreases from 3.42 nm to 1.73 nm after grinding and polishing. Transmittance of CdZnTe thin film after grinding and polishing and the vibration peak of CdTe-like phonon peaks at 162 cm^-1 were enhanced. After grinding and polishing, the resistive switching ratio of CdZnTe thin film increases from 1.2 to 4.9. The reason why mechanical grinding and polishing improves the quality and resistive switching characteristics of CdZnTe thin films may be that CdZnTe thin films are recrystallize during the grinding process.

Key words: CdZnTe, magnetron sputtering, mechanical grinding and polishing, roughness, surface defect, resistive switching characteristic, recrystallization

CLC Number:

TN304

KONG Shuai, WU Min, NIE Fan, ZENG Dongmei. Effect of Mechanical Grinding and Polishing on Resistive Switching Characteristics of CdZnTe Thin Films[J]. Journal of Synthetic Crystals, 2022, 51(11): 1878-1883.

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