Processing and Characterization of 5 Inch InSb Wafer

Abstract

Abstract: Indium antimonide (InSb) materials have been widely used in infrared photoelectric detectors and other fields because of their special properties. With the development of larger arrays of mid-infrared focal plane detectors and a growing demand for low-cost InSb infrared detectors, the desired size for the InSb wafers also increases. In this paper, a new structure of graphite rest and high precision low damage single line cutting were combined to develop a 5 inch InSb crystal oriented segmentation. Low damage edge chamfering techniques while optimizing grinding parameters were used to improve the grinding of 5 inch InSb wafers. An optimized mounting process were used to further improve the flatness of polished 5 inch InSb wafers. Furthermore, the pH value and polishing solution ratio were optimized to improve the surface quality of 5 inch InSb wafers. At the same time, the crystal orientation and deviation, polished surface macroscopic quality, geometric parameters, surface roughness and lattice quality of 5 inch InSb wafers were analyzed using an X-ray crystal orientation instrument and atomic force microscope. The test results show that, high quality 5 inch InSb wafers can be created more readily by this newly optimized process, helping to meet the current demand for InSb materials in IR detectors and other fields.

Key words: InSb, 5 inch, wafer, processing, high quality, infrared detector

CLC Number:

ZHAO Chao, KONG Zhongdi, DONG Tao, WU Qing, SHE Weilin, WANG Xiaolong, XU Pengyan, LI Qian, LI Da, LI Congcong. Processing and Characterization of 5 Inch InSb Wafer[J]. Journal of Synthetic Crystals, 2022, 51(12): 2014-2021.

References

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