Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer

Abstract

Abstract: A Si doped interlayer was introduced into the GaAs barrier layer to study optical properties of InGaAs/GaAs surface quantum dots (SQDs). Photoluminescence (PL) measurements show that luminescence of InGaAs/GaAs SQDs is strongly dependent on Si doping concentration. With increasing the Si doping concentration, InGaAs/GaAs SQDs show clearly different luminescence characteristics, including: PL peak position of SQDs shifts to red at first and then to blue; the dependence of PL peak energy on the cubic root of excitation intensity changes from linear to nonlinear; configuration interaction method shows reduced blue shift for PL band; time-resolved PL indicates a transition from nonlinear decay of type-II QDs to linear decay of type-I QDs. These experimental results indicate that Si doping fill the surface states and modify the surface Fermi level pinning effect, thus changing the luminescence characteristics of InGaAs/GaAs SQDs. This research provides a support for understanding and tailing the surface-sensitive characteristics of InGaAs SQDs for development of sensors.

Key words: InGaAs quantum dot, Si doping, surface Fermi level, photoluminescence, indirect-transition emission, time-resolved photoluminescence

CLC Number:

TN304

LIU Xiaohui, LIU Jingtao, GUO Yingnan, WANG Ying, GUO Qinglin, LIANG Baolai, WANG Shufang, FU Guangsheng. Optical Properties of InGaAs/GaAs Surface Quantum Dots Regulated by Introducing a Si Doped Interlayer[J]. Journal of Synthetic Crystals, 2023, 52(1): 73-82.

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