Epitaxial Growth of GaN Based RF Electronic Materials on Si Substrates

Abstract

Abstract: Due to the advantages of both large size, low cost, and compatibility with existing CMOS processes, GaN based ratio frequency (RF) electronic materials and devices on Si substrates have become the next focus of attention in this field after power electronic devices. Due to the different mechanical properties of high-resistivity Si substrates, it is still difficult to control stress and suppress dislocations in the growth of GaN based epitaxial materials on high-resistivity Si substrates, as well as address serious RF loss issues that limit their applications in the field of RF electronics. This work briefly introduces the research status and challenges of GaN based RF electronic materials on Si substrates, focusing on the main research progress of the Peking University research team in the formation mechanism of RF loss, epitaxial growth of GaN on high-resistivity Si substrates with low dislocation density and low RF loss. Finally, the future development of GaN based RF electronic materials and devices on Si substrates is prospected.

Key words: GaN-on-Si, MOCVD, stress, dislocation, RF loss

CLC Number:

O484.1

YANG Xuelin, SHEN Bo. Epitaxial Growth of GaN Based RF Electronic Materials on Si Substrates[J]. Journal of Synthetic Crystals, 2023, 52(5): 723-731.

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