Rapid Preparation and Structural Characterization of  Two-Dimensional Layered In2Se3 Materials

Abstract

Abstract: In₂Se₃ 2D layered materials have excellent photoelectric, thermoelectric and ferroelectric properties. At present, most of the In₂Se₃ materials are obtained by mechanical exfoliation of bulk In₂Se₃ prepared by the complicated chemical vapor transport (CVT) method with long time and high cost. Compared with CVT method, the Bridgman (B-S) method has the advantages of simple preparation process, high efficiency and low cost. In this paper, the bulk In₂Se₃ prepared by CVT and B-S method were mechanically exfoliated and transferred to SiO₂/Si(111) substrates to obtain the corresponding two-dimensional layered In₂Se₃ samples. The surface morphology, lattice vibration spectrum and crystalline quality of both samples were also measured by atomic force microscopy (AFM), laser Raman and X-ray diffraction (XRD). The results show that the samples prepared and exfoliated by B-S method have almost the same surface atomic level flatness and single crystal crystalline quality as those prepared and exfoliated by CVT method. This paper provides a more economical and practical way to obtain high-quality two-dimensional layered In₂Se₃ materials.

Key words: In₂Se₃, two-dimensional layered material, mechanical exfoliation, chemical vapor transport method, Bridgman method

CLC Number:

O766
O484

YU Shuxin, JIN Zexin, CHEN Rong, LI Tao, ZU Xiangyu, WU Haifei. Rapid Preparation and Structural Characterization of Two-Dimensional Layered In₂Se₃ Materials[J]. Journal of Synthetic Crystals, 2023, 52(10): 1787-1792.

References

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Rapid Preparation and Structural Characterization of Two-Dimensional Layered In₂Se₃ Materials

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