Preparation and Properties of Low-Absorption Sapphire Crystal by Modified Kyropoulos Method

Abstract

Abstract: In order to meet the demand for low-absorption sapphire crystal materials in important national defense projects in China, a self-produced crystal growth apparatus is developed in this study and the successful growth of low-absorption sapphire crystal can be achieved. The as-obtained crystal exhibits excellent transparency in the ultraviolet, visible, and near to mid-infrared wavelength ranges. The transmittance is above 83% as the wavelength in the range of 250 nm to 400 nm, while the transmittance is above 85% as the wavelength in the range of 400 nm to 4 200 nm. On the basis of the characterization tests conducted on different regions of the crystal, the average dislocation density of crystal can be determined as 253.19 cm^-2. The rocking curve shows symmetrical and sharp peaks with a full width at half maximum of 14″. In addition, it is worth noting that the light absorption coefficient of crystal is (23.3~30.4)×10^-6 cm^-1 at the wavelength of 1 064 nm, indicating that the impurity elements inside the crystal can be effectively controlled. Accordingly, the outstanding optical properties crystal can be applied in high-energy laser systems, space camera lenses and other relevant fields.

Key words: low absorption, Kyropoulos method, impurity element, light absorption coefficient, transmittance, dislocation density

CLC Number:

O78
TQ164

ZHAO Peng, SONG Jianjun, ZHANG Wei, CHENG Gang, ZHANG Lisheng, FU Chunlei, SHI Gang, HUANG Cunxin. Preparation and Properties of Low-Absorption Sapphire Crystal by Modified Kyropoulos Method[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2023, 52(12): 2203-2209.

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