Synthesis of Doped Diamond by High-Pressure and High-Temperature: a Review

Abstract

Abstract: Diamond possesses an ultra-high thermal conductivity and a wide band-gap. Its electrical resistance could be adjusted for the semiconductor application by increasing the electron and vacancy content introduced by doping different elements. Therefore, diamond is thought to be the final wide band-gap semiconductor materials. This paper firstly introduces the synthesis of diamond by high-pressure and high-temperature (HPHT) method, and then systematically reviews the current status and developments of diamond doping by HPHT. The effects of single-element doping, such as N, B, P, and S, as well as multi-elements co-doping in the diamond crystal growth and its electrical properties are analyzed. In additional, this paper summaries the study diamond doping using first-principle calculation. HPHT annealing could effectively change the combinations of doped elements and the associated vacancies and their distribution. This paper reviews the adjustment of nitrogen-related color centers in diamond by HPHT annealing, elucidating the formation mechanisms of various nitrogen-related color centers. Finally, This paper prospects the potential optical and electrical properties of doped diamonds, highlighting the importance of theoretical calculations and experimental methods for multi-element co-doping investigation to enhance the performance of doped diamonds.

Key words: diamond, HPHT, doping, nitrogen-vacancy center, annealing, first-principle calculation

CLC Number:

O78
TQ163

HAO Jinglin, DENG Lifen, WANG Kaiyue, SONG Hui, JIANG Nan, KAZUHITO Nishimura. Synthesis of Doped Diamond by High-Pressure and High-Temperature: a Review[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(2): 194-209.

References

[1] GRIDNEVA I V, MILMAN Y V, TREFILOV V I. Phase transition in diamond-structure crystals during hardness measurements[J]. Physica Status Solidi (a), 1972, 14(1): 177-182.
[2] FIELD J E. The mechanical and strength properties of diamond[J]. Reports on Progress in Physics, 2012, 75(12): 126505.
[3] UMEZAWA H. Recent advances in diamond power semiconductor devices[J]. Materials Science in Semiconductor Processing, 2018, 78: 147-156.
[4] TU J P, LIU J L, YAO L, et al. Small-angle X-ray scattering performances of single crystal and polycrystalline diamond windows in a heated environment[J]. Journal of Materials Science, 2022, 57(27): 12824-12835.
[5] BUNDY F P, HALL H T, STRONG H M, et al. Man-made diamonds[J]. Nature, 1955, 176(4471): 51-55.
[6] MARTINEAU P M, LAWSON S C, TAYLOR A J, et al. Identification of synthetic diamond grown using chemical vapor deposition (CVD)[J]. Gems & Gemology, 2004, 40(1): 2-25.
[7] WENTORF R H Jr. Diamond growth rates[J]. The Journal of Physical Chemistry, 1971, 75(12): 1833-1837.
[8] ZHANG F Q, XIE E Q, YANG B, et al. Synthesis and infrared absorption characteristics of boron-doped semiconducting diamond thin films[J]. Materials Letters, 1994, 19(3/4): 115-118.
[9] NEUMARK G F. Achievement of well conducting wide band-gap semiconductors: role of solubility and of nonequilibrium impurity incorporation[J]. Physical Review Letters, 1989, 62(15): 1800-1803.
[10] OKANO K, KIYOTA H, IWASAKI T, et al. Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source[J]. Applied Physics A, 1990, 51(4): 344-346.
[11] PINAULT M A, BARJON J, KOCINIEWSKI T, et al. The n-type doping of diamond: present status and pending questions[J]. Physica B: Condensed Matter, 2007, 401/402: 51-56.
[12] GOSS J P, EYRE R J, BRIDDON P R. Theoretical models for doping diamond for semiconductor applications[J]. Physica Status Solidi (b), 2008, 245(9): 1679-1700.
[13] BUNDY F P, WENTORF R H Jr. Direct transformation of hexagonal boron nitride to denser forms[J]. The Journal of Chemical Physics, 1963, 38(5): 1144-1149.
[14] BUNDY F. Methods and mechanisms of synthetic diamond growth[J]. Chemistry and Physics of Carbon, 1973, 10: 213-263.
[15] YOU Y E, LI S S, SU T C, et al. Research progress of large diamond single crystals under high pressure and high temperature[J]. Acta Physica Sinica, 2020, 69(23): 238101.
[16] CZELEJ K, ŚPIEWAK P, KURZYDŁOWSKI K J. Electronic structure of substitutionally doped diamond: spin-polarized, hybrid density functional theory analysis[J]. Diamond and Related Materials, 2017, 75: 146-151.
[17] OKANO K, AKIBA Y, KUROSU T, et al. Synthesis of B-doped diamond film[J]. Journal of Crystal Growth, 1990, 99(1/2/3/4): 1192-1195.
[18] EINAGA Y. Development of electrochemical applications of boron-doped diamond electrodes[J]. Bulletin of the Chemical Society of Japan, 2018, 91(12): 1752-1762.
[19] 张健琼, 贾晓鹏, 马红安, 等. 掺硼金刚石的高温高压合成[J]. 金刚石与磨料磨具工程, 2005, 25(1): 15-17.
ZHANG J Q, JIA X P, MA H A, et al. The synthesis of boron-doped diamond at high pressure and high temperature[J]. Diamond & Abrasives Engineering, 2005, 25(1): 15-17 (in Chinese).
[20] XIAO H Y, LI S S, QIN Y K, et al. Studies on synthesis of boron-doped Gem-diamond single crystals under high temperature and high presure[J]. Acta Physica Sinica, 2014, 63(19): 198101.
[21] MA L Q, MA H A, XIAO H Y, et al. Effect of additive boron on type-Ib gem diamond single crystals synthesized under HPHT[J]. Chinese Science Bulletin, 2010, 55(8): 677-679.
[22] WANG K Y, STEEDS J W, SARUA A. Inhomogeneity distribution of impurities in high temperature high pressure synthesized boron-doped diamond[J]. Diamond and Related Materials, 2022, 130: 109540.
[23] WOOD G F, ZVORISTE-WALTERS C E, MUNDAY M G, et al. High pressure high temperature synthesis of highly boron doped diamond microparticles and porous electrodes for electrochemical applications[J]. Carbon, 2021, 171: 845-856.
[24] DAI Y, LONG R, HUANG B B, et al. Effect of boron on the superconducting transition of heavily doped diamond[J]. Diamond and Related Materials, 2007, 16(2): 353-358.
[25] BOERI L, KORTUS J, KROGH ANDERSEN O. Normal and superconducting state properties of B-doped diamond from first-principles[J]. Science and Technology of Advanced Materials, 2006, 7: S54-S59.
[26] SHAKHOV F M, ABYZOV A M, KIDALOV S V, et al. Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst[J]. Journal of Physics and Chemistry of Solids, 2017, 103: 224-237.
[27] SUMIYA H, SATOH S, NISHIBAYASHI Y, et al. Development of high-purity synthetic diamonds[J]. Sumitomo Electric Technical Review, 1995: 69-69.
[28] DAVIES G. The effect of nitrogen impurity on the annealing of radiation damage in diamond[J]. Journal of Physics C: Solid State Physics, 1972, 5(17): 2534-2542.
[29] 董秉宇, 张建洪. 钻石的辐射着色处理、色心及光谱特征(一)[J]. 国外非金属矿与宝石, 1990(4): 39-40.
DONG B Y, ZHANG J H. Radiation coloring treatment, color center and spectral characteristics of diamonds (1)[J]. China Gems & Jades, 1990(4): 39-40 (in Chinese).
[30] 何雪梅. 天然金刚石的红外光谱特征及其分类[J]. 地质与勘探, 2000, 36(4): 45-47.
HE X M. Infrared spectrum characteristics and classification of nature diamond[J]. Geology and Prospecting, 2000, 36(4): 45-47 (in Chinese).
[31] CHRENKO R M, TUFT R E, STRONG H M. Transformation of the state of nitrogen in diamond[J]. Nature, 1977, 270(5633): 141-144.
[32] PUTTICK K E. The properties of natural and synthetic diamond[J]. Tribology International, 1994, 27(3): 208-209.
[33] 殷小玲. 金刚石颜色成因探讨[J]. 超硬材料工程, 2007, 19(2): 53-56.
YIN X L. Genesis of diamond coloration[J]. Superhard Material Engineering, 2007, 19(2): 53-56 (in Chinese).
[34] JOBBINS E A. (B. W.) Anderson. gem testing. London and Boston (butterworths)[J]. Mineralogical Magazine, 1980, 43(332): 1071.
[35] 亓利剑, 杨勇, 罗永安, 等. 辐照处理彩色钻石的缺陷中心及阴极发光谱[J]. 宝石和宝石学杂志, 2000, 2(2): 7-11+64.
QI L J, YANG Y, LUO Y A, et al. CL spectrum and defect centres of irradiated colour diamonds[J]. Journal of Gems & Gemmology, 2000, 2(2): 7-11+64 (in Chinese).
[36] LIANG Z Z, JIA X P, KANDA H, et al. A new dopant of NaN₃ for high-concentration-nitrogen diamond synthesized by HPHT[J]. Chinese Physics Letters, 2007, 24(2): 559-562.
[37] WANG J Z, LI S S, HU M H, et al. C₃H₆N₆ doping effect of synthetic diamond under high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2020, 87: 105150.
[38] PALYANOV Y N, BORZDOV Y M, KHOKHRYAKOV A F, et al. Effect of nitrogen impurity on diamond crystal growth processes[J]. Crystal Growth & Design, 2010, 10(7): 3169-3175.
[39] HUANG G F, JIA X P, MA H A, et al. Transformation of nitrogen state in high-level N-doped gem-quality diamond crystal annealed at high temperature and high pressure[J]. Chinese Physics Letters, 2012, 29(10): 106102.
[40] ZHENG Y J, HUANG G F, LI Z C, et al. Evolution of nitrogen structure in N-doped diamond crystal after high pressure and high temperature annealing treatment[J]. Chinese Physics B, 2014, 23(11): 118102.
[41] NIE Y, LI S S, HU Q, et al. Effects of high pressure and high temperature annealing on the characteristics of HPHT diamonds with high nitrogen content[J]. Optical Materials, 2023, 137: 113538.
[42] RUSEVICH L L, KOTOMIN E A, POPOV A I, et al. The vibrational and dielectric properties of diamond with N impurities: first principles study[J]. Diamond and Related Materials, 2022, 130: 109399.
[43] KALISH R. The search for donors in diamond[J]. Diamond and Related Materials, 2001, 10(9/10): 1749-1755.
[44] TANG L, ZHOU X T, YUE R F, et al. N-type lithium-nitrogen codoping in diamond from first principles[C]//2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC). October 18-20, 2017, Hsinchu, Taiwan, China. IEEE, 2017: 1-2.
[45] 周林, 马红安, 孙普男, 等. NiMnCo-C-S系中掺硫金刚石单晶的研究(英文)[J]. 人工晶体学报, 2011, 40(1): 66-69.
ZHOU L, MA H A, SUN P N, et al. Study on sulfur-doped diamond single crystal in NiMnCo-C-S system[J]. Journal of Synthetic Crystals, 2011, 40(1): 66-69.
[46] CHEN N, MA H A, FANG C, et al. Synthesis and characterization of IIa-type S-doped diamond in FeNi catalyst under high pressure and high temperature conditions[J]. International Journal of Refractory Metals and Hard Materials, 2017, 66: 122-126.
[47] CHEN N, MA H A, CHEN L X, et al. Effects of S on the synthesis of type Ib diamond under high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2018, 71: 141-146.
[48] ZHANG H, LI S S, SU T C, et al. Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions[J]. Chinese Physics B, 2016, 25(11): 118104.
[49] WANG J K, LI S S, CUI J L, et al. N-type large single crystal diamond with S doping and B-S co-doping grown in FeNi-C system[J]. International Journal of Refractory Metals and Hard Materials, 2019, 81: 100-110.
[50] WANG J K, LI S S, WANG N, et al. Synthesis and characteristics of type Ib diamond doped with NiS as an additive[J]. Chinese Physics Letters, 2019, 36(4): 046101.
[51] 聂媛, 许安涛, 李尚升, 等. 以磷化铁为添加剂沿(111)面生长磷掺杂金刚石大单晶[J]. 人工晶体学报, 2022, 51(4): 587-593.
NIE Y, XU A T, LI S S, et al. Growth of P-doped diamond large single crystals along (111) surface with Fe₃P as additive[J]. Journal of Synthetic Crystals, 2022, 51(4): 587-593 (in Chinese).
[52] GONG C S, LI S S, ZHANG H R, et al. Study on synthesis and electrical properties of slab shape diamond crystals in FeNiMnCo-C-P system under HPHT[J]. International Journal of Refractory Metals and Hard Materials, 2017, 66: 116-121.
[53] YU K, LI S, YANG Q, et al. Effects of phosphorus doping via Mn₃P₂ on diamond growth along the (100) surfaces[J]. CrystEngComm, 2019, 21(44): 6810-6818.
[54] 王广文, 邵庆益. 磷掺杂金刚石薄膜的电子结构及空位对其的影响[J]. 中国科学: 物理学力学天文学, 2010, 40(7): 869-875.
WANG G W, SHAO Q Y. Electronic structure of phosphorus-doped diamond films and the effect of vacancies on them[J]. Scientia Sinica (Physica, Mechanica & Astronomica), 2010, 40(7): 869-875 (in Chinese).
[55] SITTAS G, KANDA H, KIFLAWI I, et al. Growth and characterization of Si-doped diamond single crystals grown by the HTHP method[J]. Diamond and Related Materials, 1996, 5(6/7/8): 866-869.
[56] FANG C, SHEN W X, ZHANG Y W, et al. Si doping effects on the growth of large single-crystal diamond in a Ni-based metal catalyst system under high pressure and high temperature[J]. Crystal Growth & Design, 2019, 19(7): 3955-3961.
[57] SOFFNER L T S, DOS SANTOS A A A, TRINDADE D W, et al. HPHT diamond crystallization in the Ni-Mn-C system: effect of Mg additions[J]. Journal of Crystal Growth, 2020, 550: 125888.
[58] PALYANOV Y N, KUPRIYANOV I N, BORZDOV Y M, et al. High-pressure synthesis and characterization of Ge-doped single crystal diamond[J]. Crystal Growth & Design, 2016, 16(6): 3510-3518.
[59] PALYANOV Y N, KUPRIYANOV I N, BORZDOV Y M. High-pressure synthesis and characterization of Sn-doped single crystal diamond[J]. Carbon, 2019, 143: 769-775.
[60] ZHANG H, LI S S, LI G H, et al. Effect of B-S co-doping on large diamonds synthesis under high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2017, 66: 26-30.
[61] TANG L, YUE R F, WANG Y. N-type B-S co-doping and S doping in diamond from first principles[J]. Carbon, 2018, 130: 458-465.
[62] LI Y, JIA X P, MA H A, et al. Electrical properties of diamond single crystals co-doped with hydrogen and boron[J]. CrystEngComm, 2014, 16(32): 7547-7551.
[63] LIU X B, JIA X P, ZHANG Z F, et al. Synthesis and characterization of new “BCN” diamond under high pressure and high temperature conditions[J]. Crystal Growth & Design, 2011, 11(4): 1006-1014.
[64] YAN B M, JIA X P, SUN S S, et al. The growth mechanism of B/N co-doped diamonds under high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2015, 48: 56-60.
[65] HU M H, BI N, LI S S, et al. Synthesis and characterization of boron and nitrogen co-doped diamond crystals under high pressure and high temperature conditions[J]. CrystEngComm, 2017, 19(31): 4571-4575.
[66] MIAO X Y, CHEN L C, MA H A, et al. High-pressure and high-temperature treatment of N-rich B-doped diamonds[J]. CrystEngComm, 2019, 21(26): 3961-3965.
[67] FANG C, JIA X P, CHEN N, et al. HPHT synthesis of N-H co-doped diamond single crystals[J]. Journal of Crystal Growth, 2016, 436: 34-39.
[68] SUN S S, XU Z H, CUI W, et al. Synthesis of diamonds in Fe-C systems using nitrogen and hydrogen co-doped impurities under HPHT[J]. Chinese Physics B, 2017, 26(9): 098101.
[69] CAI Z H, LI M, CHEN L C, et al. Study on the effect of N-H-O co-doping on diamond growth and its mechanism under HPHT by FeNi solvent[J]. CrystEngComm, 2022, 24(9): 1773-1781.
[70] YAN B M, JIA X P, FANG C, et al. The effect of phosphorus and nitrogen co-doped on the synthesis of diamond at high pressure and high temperature[J]. International Journal of Refractory Metals and Hard Materials, 2016, 54: 309-314.
[71] GAO N, GAO L L, YU H Y. First-principles study of N and S co-doping in diamond[J]. Diamond and Related Materials, 2023, 132: 109651.