Research Progress of Wide Bandgap Semiconductor ZnGa2O4

Abstract

Abstract: Due to their unique physical and chemical properties, wide bandgap semiconductor materials have shown great potential in the field of optoelectronic devices, and have received more and more research and attention. Zinc gallate (ZnGa₂O₄) is a wide bandgap semiconductor material, showing broad application prospects in the fields of solar-blind ultraviolet photoelectric detection and X-ray detection for its wide bandgap, unique structure and good thermal stability. In this paper, based on the basic structural characteristics of ZnGa₂O₄, the bandgap, photoelectric properties of ZnGa₂O₄, the preparation methods of ZnGa₂O₄ bulk single crystal and thin film are introduced in detail. Combined with the recent research results of domestic and foreign scholars, the application prospects of ZnGa₂O₄ in many fields are summarized, especially the research progress of solar-blind ultraviolet photoelectric detection, memristor, X-ray detection and power devices. Finally, the future development direction of ZnGa₂O₄ is prospected, and it is pointed out that the quality and performance of ZnGa₂O₄materials can be further improved to improve device performance and meet higher level application requirements.

Key words: ZnGa₂O₄, wide bandgap semiconductor, photoelectric property, preparation method, application

CLC Number:

LEI Shasha, GONG Qiaorui, ZHAO Chengchun, SUN Xiaohui, HANG Yin. Research Progress of Wide Bandgap Semiconductor ZnGa₂O₄[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(8): 1289-1301.

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Research Progress of Wide Bandgap Semiconductor ZnGa₂O₄

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