Progress and Prospect of Molecular Beam Epitaxy Equipment at Home and Abroad

Abstract

Abstract: Molecular beam epitaxy (MBE) is an ultra-high vacuum, ultra-high precision and uniformity thin film deposition process by which to fabricate epitaxial films of solid-state microwave RF devices, semiconductor lasers and detectors, etc, and plays a fundamental role in developing compound semiconductor materials for electronics and optics. The article briefly introduces technical characteristics of the MBE equipment. Then historical development and current status of world-renowned MBE manufacturers such as Riber, Veeco, and DCA, and localization progress of MBE equipment from domestic manufacturers such as CETC48, SKY and FERMI are elaborated. Finally, future trends of MBE are expected, pointing out that it is certainly timely for substitution. To seize the opportunities and overcome the challenges, we need to promote technological innovation and industrial application of MBE equipment quickly and to provide important supports for China's scientific and technological self-reliance and self-improvement.

Key words: molecular beam epitaxy equipment, compound semiconductor, localization, ultra-high vacuum

CLC Number:

TN305

CHEN Fengwu, LYU Wenli, GONG Xin, XUE Yong, GONG Xiaoliang. Progress and Prospect of Molecular Beam Epitaxy Equipment at Home and Abroad[J]. JOURNAL OF SYNTHETIC CRYSTALS, 2024, 53(9): 1494-1503.

References

[1] PANISH M B. Molecular beam epitaxy[J]. Science, 1980, 208(4446): 916-922.
[2] FOXON C T. Three decades of molecular beam epitaxy[J]. Journal of Crystal Growth, 2003, 251(1/2/3/4): 1-8.
[3] 郭秦敏, 秦志辉. 气相沉积技术在原子制造领域的发展与应用[J]. 物理学报, 2021, 70(2): 199-213.
GUO Q M, QIN Z H. Development and application of vapor deposition technology in atomic manufacturing[J]. Acta Physica Sinica, 2021, 70(2): 199-213 (in Chinese).
[4] ROGERS T J. Molecular beam epitaxy in a high-volume GaAs fab[J]. Journal of Crystal Growth, 2009, 311(7): 1671-1675.
[5] 刘峰奇, 张锦川, 刘俊岐, 等. 量子级联激光器研究进展[J]. 中国激光, 2020, 47(7): 0701007.
LIU F Q, ZHANG J C, LIU J Q, et al. Progress in quantum cascade lasers[J]. Chinese Journal of Lasers, 2020, 47(7): 0701007 (in Chinese).
[6] JÄGER R, RIEDL M C. MBE growth of VCSELs for high volume applications[J]. Journal of Crystal Growth, 2011, 323(1): 434-437.
[7] LEVINE B F, SACKS R N, KO J, et al. A new planar InGaAs-InAlAs avalanche photodiode[J]. IEEE Photonics Technology Letters, 2006, 18(18): 1898-1900.
[8] ZHANG Y G, GU Y, ZHU C, et al. Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors[J]. Infrared Physics & Technology, 2006, 47(3): 257-262.
[9] FASTENAU J M, LIU W K, FANG X M, et al. Commercial production of QWIP wafers by molecular beam epitaxy[J]. Infrared Physics and Technology, 2001, 42(3/4/5): 407-415.
[10] 吕衍秋, 鲁星, 鲁正雄, 等. 锑化物红外探测器国内外发展综述[J]. 航空兵器, 2020, 27(5): 1-12.
LÜ Y Q, LU X, LU Z X, et al. Review of antimonide infrared detector development at home and abroad[J]. Aero Weaponry, 2020, 27(5): 1-12 (in Chinese).
[11] PETERSON J M, FRANKLIN J A, REDDY M, et al. High-quality large-area MBE HgCdTe/Si[J]. Journal of Electronic Materials, 2006, 35(6): 1283-1286.
[12] 折伟林, 邢晓帅, 邢伟荣, 等. 中国电科11所碲镉汞薄膜材料制备技术进展[J]. 激光与红外, 2024, 54(4): 483-494.
SHE W L, XING X S, XING W R, et al. Progress of HgCdTe materials in 11th Research Institute of CETC[J]. Laser & Infrared, 2024, 54(4): 483-494 (in Chinese).
[13] 范缇文, 张永航, 曾一平, 等. 量子阱材料的电子显微镜及光致发光研究[J]. 半导体学报, 1990, 11(9): 706-708+729.
FAN T W, ZHANG Y H, ZENG Y P, et al. Electron microscopy and photoluminescence studies of GaAs/Al_xGa_1-xAs quantum wells[J]. Chinese Journal of Semiconductors, 1990, 11(9): 706-708+729 (in Chinese).
[14] 任洋, 李俊斌, 覃钢, 等. MBE生长InAs/GaSb Ⅱ类超晶格材料的界面控制方法分析[J]. 红外技术, 2021, 43(4): 301-311.
REN Y, LI J B, QIN G, et al. Analysis of interface control methods for InAs/GaSb type-Ⅱ superlattice materials grown by MBE[J]. Infrared Technology, 2021, 43(4): 301-311 (in Chinese).
[15] DE LEON N P, ITOH K M, KIM D, et al. Materials challenges and opportunities for quantum computing hardware[J]. Science, 2021, 372(6539): eabb2823.
[16] 侯志青, 刘东州, 那木拉. 稀磁半导体制备方法的研究进展[J]. 半导体技术, 2014, 39(4): 294-299.
HOU Z Q, LIU D Z, NA M L. Research progress on the preparation methods of diluted magnetic semiconductors[J]. Semiconductor Technology, 2014, 39(4): 294-299 (in Chinese).
[17] 封东来, 沈大伟, 徐海超, 等. 氧化物分子束外延技术及其在关联材料电子态研究中的应用[J]. 物理, 2012, 41(4): 211-216.
FENG D L, SHEN D W, XU H C, et al. Oxide molecular beam epitaxy and its applications in the study of electronic states of correlated materials[J]. Physics, 2012, 41(4): 211-216 (in Chinese).
[18] 张涛, 仇怀利, 王军, 等. Sb₂Te₃拓扑绝缘体薄膜的MBE制备研究[J]. 合肥工业大学学报(自然科学版), 2016, 39(9): 1216-1219.
ZHANG T, QIU H L, WANG J, et al. Preparation of Sb₂Te₃ topological insulator film by MBE[J]. Journal of Hefei University of Technology (Natural Science), 2016, 39(9): 1216-1219 (in Chinese).
[19] 刘超,包兴明. 世界主要MBE设备制造商及产品简介[J]. 中国材料科技与设备, 2009, 5:14-17.
LIU C, BAO X M. Introduction of the world main MBE companies and their products[J]. China Materials Technology and Equipment, 2009, 5:14-17 (in Chinese).
[20] 龚欣, 陈峰武, 吕文利, 等. 高性能分子束外延用束源炉的研制[J]. 电子工业专用设备, 2023, 52(4): 35-37+45.
GONG X, CHEN F W, LYU W L, et al. Development of high-performance molecular beam epitaxy sources[J]. Equipment for Electronic Products Manufacturing, 2023, 52(4): 35-37+45 (in Chinese).
[21] 周均铭. 中国分子束外延技术发展历程[J]. 物理, 2021, 50(12): 843-848.
ZHOU J M. Development course of molecular beam epitaxy technology in China[J]. Physics, 2021, 50(12): 843-848 (in Chinese).