Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices

doi:10.16553/j.cnki.issn1000-985x.2024.0267

Abstract

Abstract: The low thermal conductivity of ultrawide bandgap (UWBG) gallium oxide (β-Ga₂O₃) is the most significant bottleneck restricting the development of its power devices, posing a huge challenge for efficient heat dissipation under high-power density conditions. Therefore, developing new thermal management and packaging technologies is extremely urgent. It is crucial to alleviate the performance and reliability issues caused by self-heating through thermal management at the material, device, and packaging levels. This paper provides a timely review of the state of the art in thermal management of UWBG β-Ga₂O₃ power devices, discussing related challenges, potential solutions, and research opportunities. The paper firstly introduces the characteristics of UWBG β-Ga₂O₃ and its significance in electronic devices, and elaborates on the crucial firstly importance of thermal management in β-Ga₂O₃ devices. Then, various thermal management techniques, including substrate-related methods and junction-side thermal management techniques, are thoroughly examined, and their impact on the electrical properties of β-Ga₂O₃ devices is analyzed. Finally, the future development trends of thermal management for UWBG β-Ga₂O₃ devices are prospected. Multi-dimensional thermal management strategies are proposed, focusing on “material-device-packaging” electrothermal collaborative design, near junction heterogeneous integration, and novel external packaging, aiming to arouse relevant research and accelerate the development and industrialization process of UWBG β-Ga₂O₃ power devices.

Key words: thermal management, ultrawide bandgap (UWBG), gallium oxide (β-Ga₂O₃), material-device-packaging, junction-side heat dissipation, integration of high thermal conductivity substrate, electrothermal co-design

CLC Number:

TN386.1

XIE Yinfei, HE Yang, LIU Weiye, XU Wenhui, YOU Tiangui, OU Xin, GUO Huaixin, SUN Huarui. Recent Progress on Thermal Management of Ultrawide Bandgap Gallium Oxide Power Devices[J]. Journal of Synthetic Crystals, 2025, 54(2): 290-311.

References

[1] PARET P, FINEGAN D, NARUMANCHI S. Artificial intelligence for power electronics in electric vehicles: challenges and opportunities[J]. Journal of Electronic Packaging, 2023, 145(3): 034501.
[2] ZHAO S, BLAABJERG F, WANG H. An overview of artificial intelligence applications for power electronics[J]. IEEE Transactions on Power Electronics, 2021, 36(4): 4633-4658.
[3] RODRIGUES E M G, GODINA R, POURESMAEIL E. Industrial applications of power electronics[J]. Electronics, 2020, 9(9): 1534.
[4] CHAN C C, CHAU K T. An overview of power electronics in electric vehicles[J]. IEEE Transactions on Industrial Electronics, 1997, 44(1): 3-13.
[5] LUTZ J, SCHEUERMANN U, SCHLANGENOTTO H, et al. Power semiconductor devices-key components for efficient electrical energy conversion systems[M]. Berling: Springer, Berling, Heidelberg, 2018: 1-20.
[6] HUANG A. Power semiconductor devices for smart grid and renewable energy systems[J]. Proceedings of the IEEE, 2017, 105: 2019-2047.
[7] 世界集成电路协会. 2024年全球半导体市场秋季预测报告[EB/OL]. (2024-09-18) [2024-10-09]. http://wicassociation.org/articles/101.html.
WORLD INTEGRATED CIRCUIT ASSOCIATION. 2024 global semiconductor market autumn forecast report[EB/OL]. (2024-09-18) [2024-10-09]. http://wicassociation.org/articles/101.html (in Chinses).
[8] ZHANG Y H, SUN M, LIU Z H, et al. Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors[J]. IEEE Transactions on Electron Devices, 2013, 60(7): 2224-2230.
[9] PEARTON S J, YANG J C, CARY P H, et al. A review of Ga₂O₃ materials, processing, and devices[J]. Applied Physics Reviews, 2018, 5(1): 011301.
[10] JOSHI S N, ZHOU F, LIU Y H, et al. A review of select patented technologies for cooling of high heat flux power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2023, 38(6): 6790-6794.
[11] CHARBONEAU B C, WANG F, VAN WYK J D, et al. Double-sided liquid cooling for power semiconductor devices using embedded power packaging[J]. IEEE Transactions on Industry Applications, 2008, 44(5): 1645-1655.
[12] KHORUNZHII I, GABOR H, JOB R, et al. Modelling of a pin-fin heat converter with fluid cooling for power semiconductor modules[J]. International Journal of Energy Research, 2003, 27(11): 1015-1026.
[13] CHO J, LI Z J, ASHEGHI M, et al. Near-junction thermal management: thermal conduction in gallium nitride composite substrates[J]. Annual Review of Heat Transfer, 2015, 18: 7-45.
[14] BAR-COHEN A, ALBRECHT J D, MAURER J J. Near-junction thermal management for wide bandgap devices[C]. 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2011: 1-5.
[15] QIAN C, GHEITAGHY A M, FAN J J, et al. Thermal management on IGBT power electronic devices and modules[J]. IEEE Access, 2018, 6: 12868-12884.
[16] SHENAI K. Future prospects of widebandgap (WBG) semiconductor power switching devices[J]. IEEE Transactions on Electron Devices, 2015, 62(2): 248-257.
[17] SHE X, HUANG A Q, LUCÍA Ó, et al. Review of silicon carbide power devices and their applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.
[18] ZHANG Y H, ZUBAIR A, LIU Z H, et al. GaN FinFETs and trigate devices for power and RF applications: review and perspective[J]. Semiconductor Science Technology, 2021, 36(5): 054001.
[19] JONES E A, WANG F F, COSTINETT D. Review of commercial GaN power devices and GaN-based converter design challenges[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(3): 707-719.
[20] ALVES L F S, GOMES R C M, LEFRANC P, et al. SIC power devices in power electronics: an overview[C]. 2017 Brazilian Power Electronics Conference (COBEP). November 19-22, 2017, Juiz de Fora, Brazil. IEEE, 2017: 1-8.
[21] ZHANG Y H, PALACIOS T. (Ultra)wide-bandgap vertical power FinFETs[J]. IEEE Transactions on Electron Devices, 2020, 67(10): 3960-3971.
[22] HU Q Y. Advancements and prospects in third-generation semiconductor materials: a comprehensive analysis[J]. Highlights in Science, Engineering and Technology, 2024, 81: 631-636.
[23] CHAUDHARY O S, DENAÏ M, REFAAT S S, et al. Technology and applications of wide bandgap semiconductor materials: current state and future trends[J]. Energies, 2023, 16(18): 6689.
[24] 周选择. 基于超宽禁带氧化镓半导体材料的增强型场效应晶体管设计研制[D]. 合肥: 中国科学技术大学, 2023.
ZHOU X Z. Design and development of enhanced field effect transistor based on ultra-wide band gap gallium oxide semiconductor material[D]. Hefei: University of Science and Technology of China, 2023 (in Chinese).
[25] TSAO J Y, CHOWDHURY S, HOLLIS M A, et al. Ultrawide-bandgap semiconductors: research opportunities and challenges[J]. Advanced Electronic Materials, 2018, 4(1): 1600501.
[26] DONATO N, ROUGER N, PERNOT J, et al. Diamond power devices: state of the art, modelling, figures of merit and future perspective[J]. Journal of Physics D: Applied Physics, 2020, 53(9): 093001.
[27] QIN Y, ALBANO B, SPENCER J, et al. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective[J]. Journal of Physics D: Applied Physics, 2023, 56(9): 093001.
[28] SHENAI K, DUDLEY M, DAVIS R F. Current status and emerging trends in wide bandgap (WBG) semiconductor power switching devices[J]. ECS Journal of Solid State Science and Technology, 2013, 2(8): N3055-N3063.
[29] WELLMANN P J. Power electronic semiconductor materials for automotive and energy saving applications - SiC, GaN, Ga₂O₃, and diamond[J]. Zeitschrift für anorganische und allgemeine Chemie, 2017, 643(21): 1312-1322.
[30] BUFFOLO M, FAVERO D, MARCUZZI A, et al. Review and outlook on GaN and SiC power devices: industrial state-of-the-art, applications, and perspectives[J]. IEEE Transactions on Electron Devices, 2024, 71(3): 1344-1355.
[31] ZHAO S, CONNIE A T, DASTJERDI M H T, et al. Aluminum nitride nanowire light emitting diodes: breaking the fundamental bottleneck of deep ultraviolet light sources[J]. Scientific Reports, 2015, 5: 8332.
[32] SCHRECK M. Growth of single crystal diamond wafers for future device applications[M].New York: John Wiley & Sons Inc, 2021.
[33] HE H Y, BLANCO M A, PANDEY R. Electronic and thermodynamic properties of β-Ga₂O₃[J]. Applied Physics Letters, 2006, 88(26): 261904.
[34] HE H Y, ORLANDO R, BLANCO M A, et al. First-principles study of the structural, electronic, and optical properties of Ga₂O₃ in its monoclinic and hexagonal phases[J]. Physical Review B, 2006, 74(19): 195123.
[35] KROLL P, DRONSKOWSKI R, MARTIN M. Formation of spinel-type gallium oxynitrides: a density-functional study of binary and ternary phases in the system Ga-O-N[J]. Journal of Materials Chemistry, 2005, 15(32): 3296-3302.
[36] YOSHIOKA S, HAYASHI H, KUWABARA A, et al. Structures and energetics of Ga₂O₃polymorphs[J]. Journal of Physics: Condensed Matter, 2007, 19(34): 346211.
[37] HUDGINS J L, SIMIN G S, SANTI E, et al. An assessment of wide bandgap semiconductors for power devices[J]. IEEE Transactions on Power Electronics, 2003, 18(3): 907-914.
[38] MA N, TANEN N, VERMA A, et al. Intrinsic electron mobility limits in β-Ga₂O₃[J]. Applied Physics Letters, 2016, 109(21): 212101.
[39] ONUMA T, SAITO S, SASAKI K, et al. Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga₂O₃ single crystals[J]. Applied Physics Letters, 2016, 108(10): 101904.
[40] ORITA M, OHTA H, HIRANO M, et al. Deep-ultraviolet transparent conductive β-Ga₂O₃ thin films[J]. Applied Physics Letters, 2000, 77(25): 4166-4168.
[41] ONUMA T, SAITO S, SASAKI K, et al. Valence band ordering in β-Ga₂O₃ studied by polarized transmittance and reflectance spectroscopy[J]. Japanese Journal of Applied Physics, 2015, 54(11): 112601.
[42] BALIGA B J. Semiconductors for high-voltage, vertical channel field-effect transistors[J]. Journal of Applied Physics, 1982, 53(3): 1759-1764.
[43] SCHUBERT M, KORLACKI R, KNIGHT S, et al. Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals[J]. Physical Review B, 2016, 93(12): 125209.
[44] GHOSH K, SINGISETTI U. Ab initio velocity-field curves in monoclinic β-Ga₂O₃[J]. Journal of Applied Physics, 2017, 122(3): 035702.
[45] JOHNSON E. Physical limitations on frequency and power parameters of transistors[C]. 1958 IRE International Convention Record. March 21-25, 1966, New York, NY, USA. IEEE, 1966: 27-34.
[46] ZHANG J Y, SHI J L, QI D C, et al. Recent progress on the electronic structure, defect, and doping properties of Ga₂O₃[J]. APL Materials, 2020, 8(2): 020906.
[47] WU C, GUO D Y, ZHANG L Y, et al. Systematic investigation of the growth kinetics of β-Ga₂O₃ epilayer by plasma enhanced chemical vapor deposition[J]. Applied Physics Letters, 2020, 116(7): 072102.
[48] ÅHMAN J, SVENSSON G, ALBERTSSON J. A reinvestigation of β-gallium oxide[J]. Acta Crystallographica Section C Crystal Structure Communications, 1996, 52(6): 1336-1338.
[49] GALAZKA Z, IRMSCHER K, UECKER R, et al. On the bulk β-Ga₂O₃ single crystals grown by the Czochralski method[J]. Journal of Crystal Growth, 2014, 404: 184-191.
[50] VÍLLORA E G, SHIMAMURA K, UJIIE T, et al. Electrical conductivity and lattice expansion of β-Ga₂O₃ below room temperature[J]. Applied Physics Letters, 2008, 92(20): 202118.
[51] GUO Z, VERMA A, WU X F, et al. Anisotropic thermal conductivity in single crystal β-gallium oxide[J]. Applied Physics Letters, 2015, 106(11): 111909.
[52] JIANG P Q, QIAN X, LI X B, et al. Three-dimensional anisotropic thermal conductivity tensor of single crystalline β-Ga₂O₃[J]. Applied Physics Letters, 2018, 113(23): 232105.
[53] HANDWERG M, MITDANK R, GALAZKA Z, et al. Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga₂O₃ bulk-crystals[EB/OL]. 2014: 1407.4272.https://arxiv.org/abs/1407.4272v2.
[54] HANDWERG M, MITDANK R, GALAZKA Z, et al. Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-Ga₂O₃ single crystal along [100], [010] and [001] [J]. Semiconductor Science and Technology, 2016, 31(12): 125006.
[55] SANTIA M D, TANDON N, ALBRECHT J D. Lattice thermal conductivity in β-Ga₂O₃ from first principles[J]. Applied Physics Letters, 2015, 107(4): 041907.
[56] WANG H D, ZHANG Y Z, ZHANG L F, et al. Crystal structure prediction of binary alloys via deep potential[J]. Frontiers in Chemistry, 2020, 8: 589795.
[57] GRIMME S. Accurate description of van der Waals complexes by density functional theory including empirical corrections[J]. Journal of Computational Chemistry, 2004, 25(12): 1463-1473.
[58] WANG Y Z, FAN Z Y, QIAN P, et al. Quantum-corrected thickness-dependent thermal conductivity in amorphous silicon predicted by machine learning molecular dynamics simulations[J]. Physical Review B, 2023, 107(5): 054303.
[59] ZHANG H G, GU X K, FAN Z Y, et al. Vibrational anharmonicity results in decreased thermal conductivity of amorphous HfO₂ at high temperature[J]. Physical Review B, 2023, 108(4): 045422.
[60] LIU Y B, YANG J Y, XIN G M, et al. Machine learning interatomic potential developed for molecular simulations on thermal properties of β-Ga₂O₃[J]. Journal of Chemical Physics, 2020, 153(14): 144501.
[61] LI R Y, LIU Z Y, ROHSKOPF A, et al. A deep neural network interatomic potential for studying thermal conductivity of β-Ga₂O₃[J]. Applied Physics Letters, 2020, 117(15): 152102.
[62] ZHAO J L, BYGGMÄSTAR J, HE H, et al. Complex Ga₂O₃ polymorphs explored by accurate and general-purpose machine-learning interatomic potentials[J]. NPJ Computational Materials, 2023, 9: 159.
[63] LIU Y B, LIANG H L, YANG L, et al. Unraveling thermal transport correlated with atomistic structures in amorphous gallium oxide via machine learning combined with experiments[J]. Advanced Materials, 2023, 35(24): 2210873.
[64] WANG X N, YANG J F, YING P H, et al. Dissimilar thermal transport properties in κ-Ga₂O₃ and β-Ga₂O₃ revealed by machine-learning homogeneous nonequilibrium molecular dynamics simulations[EB/OL]. (2023-11-03)[2024-11-10] 2023: 2311.01099. https://arxiv.org/abs/2311.01099v1.
[65] 顾奕奕. 一文看懂超宽禁带半导体材料:氧化镓(Ga₂O₃)[EB/OL].(2023-02-28)[2024-11-10]. https://baijiahao.baidu.com/s?id=1759037596181248248&wfr=spider&for=pc.
GU Y Y. Understanding Ultrawide bandgap semiconductor material: gallium oxide in one text[EB/OL]. (2023-02-28) [2024-11-10]. https://baijiahao.baidu.com/s?id=1759037596181248248&wfr=spider&for=pc (in Chinese).
[66] CHEN X, JAGADISH C, YE J. Fundamental properties and power electronic device progress of gallium oxide[M]//ASIM R. Oxide Electronics. New York: John Wiley & Sons Inc, 2021: 235-352
[67] SUGANYA R, NAVEENKUMAR P, BALAJI B, et al. Sliding mode resonant controlled step up coupled inductor fed DC-DC converter with gallium oxide semiconductor material[J]. Materials Today: Proceedings, 2023, 77: 414-423.
[68] HWANG W S, VERMA A, PEELAERS H, et al. High-voltage field effect transistors with wide-bandgap β-Ga₂O₃ nanomembranes[J]. Applied Physics Letters, 2014, 104(20): 203111.
[69] HIGASHIWAKI M, SASAKI K, KURAMATA A, et al. Gallium oxide (Ga₂O₃) metal-semiconductor field-effect transistors on single-crystal β-Ga₂O₃ (010) substrates[J]. Applied Physics Letters, 2012, 100(1): 013504.
[70] 封兆青. 基于β-Ga₂O₃大功率金属氧化物半导体场效应晶体管的研究[D]. 西安: 西安电子科技大学, 2021.
FENG Z Q. Research on high power metal oxide semiconductor field effect transistor based on β-Ga₂O₃[D]. Xi’an: Xidian University, 2021 (in Chinese).
[71] TADJER M J. Toward gallium oxide power electronics[J]. Science, 2022, 378(6621): 724-725.
[72] PRATIYUSH A S, KRISHNAMOORTHY S, MURALIDHARAN R, et al. Advances in Ga₂O₃ solar-blind UV photodetectors[M]//Gallium Oxide Technology, Devices and Applications. Amsterdam: Elsevier, 2019: 369-399.
[73] ZHENG X Q, XIE Y, LEE J, et al. Beta gallium oxide (β-Ga₂O₃) nanoelectromechanical transducer for dual-modality solar-blind ultraviolet light detection[J]. APL Materials, 2019, 7(2): 022523.
[74] LI Z L. Innovative development and prospects of solar-blind photodetectors[J]. Highlights in Science, Engineering and Technology, 2024, 112: 160-167.
[75] DING W H, MENG X Q. High performance solar-blind UV detector based on β-Ga₂O₃/GaN nanowires heterojunction[J]. Journal of Alloys and Compounds, 2021, 866: 157564.
[76] TANG X, LI K H, ZHAO Y, et al. Quasi-epitaxial growth of β-Ga₂O₃-coated wide band gap semiconductor tape for flexible UV photodetectors[J]. ACS Applied Materials & Interfaces, 2022, 14(1): 1304-1314.
[77] CHEN H, CHEN D Z, FENG Q, et al. Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application[J]. Semiconductor Science and Technology, 2024, 39(6): 063001.
[78] GREEN A J, CHABAK K D, BALDINI M, et al. β-Ga₂O₃ MOSFETs for radio frequency operation[J]. IEEE Electron Device Letters, 2017, 38(6): 790-793.
[79] CHABAK K D, WALKER D E, GREEN A J, et al. Sub-micron gallium oxide radio frequency field-effect transistors[C]. 2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2018: 1-3.
[80] SINGH M, CASBON M A, UREN M J, et al. Pulsed large signal RF performance of field-plated Ga₂O₃ MOSFETs[J]. IEEE Electron Device Letters, 2018, 39(10): 1572-1575.
[81] ]YADAVA N, CHAUHAN R K. RF performance investigation of β-Ga₂O₃/graphene and β-Ga₂O₃/black phosphorus heterostructure MOSFETs[J]. ECS Journal of Solid State Science and Technology, 2019, 8(7): Q3058-Q3063.
[82] YADAVA N, MANI S, CHAUHAN R K. Impact of p-type NiO pocket and ultra-thin graphene layer on the RF performance of β-Ga₂O₃ MOSFET[J]. ECS Journal of Solid State Science and Technology, 2020, 9(4): 045007.
[83] SINGH R, LENKA T R, PANDA D, et al. RF performance of ultra-wide bandgap HEMTs[M]. Emerging Trends in Terahertz Solid-State Physics and Devices, 2020: 49-63.
[84] YADAVA N, CHAUHAN R K. Evaluation of the RF performance of the β-Ga₂O₃ negative-capacitance field-effect transistor[J]. Journal of Computational Electronics, 2020, 19(2): 603-612.
[85] KIM S, ZHANG Y W, YUAN C, et al. Thermal management of β-Ga₂O₃ current aperture vertical electron transistors[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2021, 11(8): 1171-1176.
[86] CHATTERJEE B, ZENG K, NORDQUIST C D, et al. Device-level thermal management of gallium oxide field-effect transistors[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2019, 9(12): 2352-2365.
[87] LEE C, ROCK N D, ISLAM A, et al. Electron-phonon effects and temperature-dependence of the electronic structure of monoclinic β-Ga₂O₃[J]. APL Materials, 2023, 11(1): 011106.
[88] DONG H, LONG S B, SUN H D, et al. Fast switching β-Ga₂O₃ power MOSFET with a trench-gate structure[J]. IEEE Electron Device Letters, 2019, 40(9): 1385-1388.
[89] AFZAL A. β-Ga₂O₃ nanowires and thin films for metal oxide semiconductor gas sensors: sensing mechanisms and performance enhancement strategies[J]. Journal of Materiomics, 2019, 5(4): 542-557.
[90] PARET P, MORENO G, KEKELIA B, et al. Thermal and thermomechanical modeling to design a gallium oxide power electronics package[C]. 2018 IEEE 6th workshop on wide bandgap power devices and applications (WiPDA). IEEE, 2018: 287-294.
[91] AHMADI E, OSHIMA Y. Materials issues and devices of α- and β-Ga₂O₃[J]. Journal of Applied Physics, 2019, 126(16): 160901.
[92] WILHELMI F, KOMATSU Y, YAMAGUCHI S, et al. Packaged β-Ga₂O₃ Schottky diodes with reduced thermal resistance by substrate thinning to 200 μm[C]. in CIPS 2022; 12th International Conference on Integrated Power Electronics Systems. March 15-17, 2022, Berlin, Germany. VDE, 2022: 1-6.
[93] WILHELMI F, KOMATSU Y, YAMAGUCHI S, et al. Switching properties of 600 V Ga₂O₃ diodes with different chip sizes and thicknesses[J]. IEEE Transactions on Power Electronics, 2023, 38(7): 8406-8418.
[94] WILHELMI F, KOMATSU Y, YAMAGUCHI S, et al. Improving the heat dissipation and current rating of Ga₂O₃ Schottky diodes by substrate thinning and junction-side cooling[J]. IEEE Transactions on Power Electronics, 2023, 38(6): 7107-7117.
[95] SEKI S, FUNAKI T, ARIMA J, et al. Evaluation of thermal resistance reduction by thinning substrate of β-Ga₂O₃ SBD[C]. 2023 International Conference on Electronics Packaging (ICEP). April 19-22, 2023, Kumamoto, Japan. IEEE, 2023: 193-194.
[96] GREEN A J, SPECK J, XING G, et al. β-gallium oxide power electronics[J]. APL Materials, 2022, 10(2): 029201.
[97] SONG Y W, SHOEMAKER D, LEACH J H, et al. Ga₂O₃-on-SiC composite wafer for thermal management of ultrawide bandgap electronics[J]. ACS Applied Materials & Interfaces, 2021, 13(34): 40817-40829.
[98] SONG Y W, BHATTACHARYYA A, KARIM A, et al. Ultra-wide band gap Ga₂O₃-on-SiC MOSFETs[J]. ACS Applied Materials & Interfaces, 2023, 15(5): 7137-7147.
[99] XIE Y F, HE Y, ZOU B, et al. Characteristics of β-Ga₂O₃ MOSFETs on polycrystalline diamond via electrothermal modeling[J]. Diamond and Related Materials, 2024, 142: 110847.
[100] AVILA-AVENDANO C, PINTOR-MONROY M I, ORTIZ-CONDE A, et al. Deep UV sensors enabling solar-blind flame detectors for large-area applications[J]. IEEE Sensors Journal, 2021, 21(13): 14815-14821.
[101] NEPAL N, KATZER D S, DOWNEY B P, et al. Heteroepitaxial growth of β-Ga₂O₃ films on SiC via molecular beam epitaxy[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020, 38(6): 063406.
[102] TAKAGI H, KURASHIMA Y, MATSUMAE T, et al. Ga₂O₃/Si and Al₂O₃/Si room-temperature wafer bonding using in situ deposited Si thin film[J]. ECS Transactions, 2018, 86(5): 169-174.
[103] XU W H, WANG Y B, YOU T G, et al. First demonstration of waferscale heterogeneous integration of Ga₂O₃ MOSFETs on SiC and Si substrates by ion-cutting process[C]. in 2019 IEEE International Electron Devices Meeting (IEDM). December 7-11, 2019, San Francisco, CA, USA. IEEE, 2019: 12.5.1-12.5.4.
[104] NOH J, ALAJLOUNI S, TADJER M J, et al. High performance β-Ga₂O₃ nano-membrane field effect transistors on a high thermal conductivity diamond substrate[J]. IEEE Journal of the Electron Devices Society, 2019, 7: 914-918.
[105] YADAV M K, MONDAL A, DAS S, et al. Impact of annealing temperature on band-alignment of PLD grown Ga₂O₃/Si (100) heterointerface[J]. Journal of Alloys and Compounds, 2020, 819: 153052.
[106] CHENG Z, YATES L, SHI J J, et al. Thermal conductance across β-Ga₂O₃-diamond van der Waals heterogeneous interfaces[J]. APL Materials, 2019, 7(3): 031118.
[107] 徐文慧. 晶圆级高导热氧化镓异质集成材料与器件[D]. 上海: 中国科学院上海微系统与信息技术研究所, 2022.
XU W H. Heterogeneous integration of wafer scale Ga₂O₃ Materials and devices with high thermal conductivity[D]. Shanghai: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 2022 (in Chinese).
[108] XU W H, YOU T G, WANG Y B, et al. Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga₂O₃ thin film on SiC[J]. Fundamental Research, 2021, 1(6): 691-696.
[109] XIE Y F, XU W H, HE Y, et al. Three-dimensional thermal analysis of heterogeneously integrated β-Ga₂O₃-on-SiC SBDs using Raman thermography and electrothermal modeling[J]. Applied Physics Letters, 2024, 124(25): 252105.
[110] QU Z Y, XIE Y F, ZHAO T C, et al. Extremely low thermal resistance of β-Ga₂O₃ MOSFETs by co-integrated design of substrate engineering and device packaging[J]. ACS Applied Materials & Interfaces, 2024, 16(42): 57816-57823.
[111] YU X X, XU W H, WANG Y B, et al. Heterointegrated Ga₂O₃-on-SiC RF MOSFETs with f_T/f_max of 47/51 GHz by ion-cutting process[J]. IEEE Electron Device Letters, 2023, 44(12): 1951-1954.
[112] WANG Y, HAN G, XU W, et al. Recessed-gate Ga₂O₃-on-SiC MOSFETs demonstrating a stable power figure of merit of 100 mW/cm² up to 200 ℃[J]. IEEE Transactions on Electron Devices, 2022, 69(4): 1945-1949.
[113] LIN C H, HATTA N, KONISHI K, et al. Single-crystal-Ga₂O₃/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface[J]. Applied Physics Letters, 2019, 114(3): 032103.
[114] CHOI S, GRAHAM S, CHOWDHURY S, et al. A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices[J]. Applied Physics Letters, 2021, 119(17): 170501.
[115] CHEN C, LUO F, KANG Y. A review of SiC power module packaging: layout, material system and integration[J]. CPSS Transactions on Power Electronics and Applications, 2017, 2(3): 170-186.
[116] OH S K, LUNDH J S, SHERVIN S, et al. Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications[J]. Journal of Electronic Packaging, 2019, 141(2): 020801.
[117] 冯家驹, 范亚明, 房丹, 等. 氮化镓功率电子器件封装技术研究进展[J]. 人工晶体学报, 2022, 51(4): 730-749.
FENG J J, FAN Y M, FANG D, et al. Research progress of gallium nitride power electronic device packaging technology[J]. Journal of Synthetic Crystals, 2022, 51(4): 730-749 (in Chinese).
[118] CHATTERJEE B, LI W S, NOMOTO K, et al. Thermal design of multi-fin Ga₂O₃ vertical transistors[J]. Applied Physics Letters, 2021, 119(10): 103502.
[119] YU C J, BUTTAY C, LABOURÉ É. Thermal management and electromagnetic analysis for GaN devices packaging on DBC substrate[J]. IEEE Transactions on Power Electronics, 2017, 32(2): 906-910.
[120] DE BOCK H P, HUITINK D, SHAMBERGER P, et al. A system to package perspective on transient thermal management of electronics[J]. Journal of Electronic Packaging, 2020, 142(4): 041111.
[121] KIM S H, SPENCER LUNDH J, SHOEMAKER D, et al. Device-level transient cooling of β-Ga₂O₃ MOSFETs[C]. in 2022 21 st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm). May 31 - June 3, 2022, San Diego, CA, USA. IEEE, 2022: 1-6.
[122] BAR-COHEN A, MAURER J J, ALTMAN D H. Embedded cooling for wide bandgap power amplifiers: a review[J]. Journal of Electronic Packaging, 2019, 141(4): 040803.
[123] LALOYA E, LUCÍA Ó, SARNAGO H, et al. Heat management in power converters: from state of the art to future ultrahigh efficiency systems[J]. IEEE Transactions on Power Electronics, 2016, 31(11): 7896-7908.
[124] WANG B Y, XIAO M, KNOLL J, et al. Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging[J]. IEEE Electron Device Letters, 2021, 42(8): 1132-1135.
[125] KIM S H, SHOEMAKER D, GREEN A J, et al. Transient thermal management of a β-Ga₂O₃ MOSFET using a double-side diamond cooling approach[J]. IEEE Transactions on Electron Devices, 2023, 70(4): 1628-1635.
[126] YUAN C, ZHANG Y W, MONTGOMERY R, et al. Modeling and analysis for thermal management in gallium oxide field-effect transistors[J]. Journal of Applied Physics, 2020, 127(15): 154502.
[127] ISLAM A E, SEPELAK N P, LIDDY K J, et al. 500 ℃ operation of β-Ga₂O₃ field-effect transistors[J]. Applied Physics Letters, 2022, 121(24): 243501.
[128] HONG W, ZHANG C, ZHANG F, et al. Performance improvement of β-Ga₂O₃ SBD-based rectifier with embedded microchannels in ceramic substrate[J]. Science China Information Sciences, 2024, 67(5): 159404.
[129] MAIMON O, LI Q L. Progress in gallium oxide field-effect transistors for high-power and RF applications[J]. Materials, 2023, 16(24): 7693.
[130] SARKAR S, GUPTA R, ROY T, et al. Review of jet impingement cooling of electronic devices: emerging role of surface engineering[J]. International Journal of Heat and Mass Transfer, 2023, 206: 123888.
[131] IRMSCHER K, GALAZKA Z, PIETSCH M, et al. Electrical properties of β-Ga₂O₃ single crystals grown by the Czochralski method[J]. Journal of Applied Physics, 2011, 110(6): 063720.
[132] NEAL A T, MOU S, RAFIQUE S, et al. Donors and deep acceptors in β-Ga₂O₃[J]. Applied Physics Letters, 2018, 113(6): 062101.
[133] PARISINI A, FORNARI R. Analysis of the scattering mechanisms controlling electron mobility in β-Ga₂O₃ crystals[J]. Semiconductor Science and Technology, 2016, 31(3): 035023.
[134] KANG Y, KRISHNASWAMY K, PEELAERS H, et al. Fundamental limits on the electron mobility of β-Ga₂O₃[J]. Journal of Physics Condensed Matter, 2017, 29(23): 234001.
[135] SIVAMANI C, MURUGAPANDIYAN P, MOHANBABU A, et al. High performance enhancement mode GaN HEMTs using β-Ga₂O₃ buffer for power switching and high frequency applications: a simulation study[J]. Microelectronics Journal, 2023, 140: 105946.
[136] LI Y H, ZHENG X F, ZHANG F, et al. Thermal management and switching performance of β-Ga₂O₃ vertical FinFET with diamond-gate structure[J]. Semiconductor Science and Technology, 2024, 39(7): 075001.
[137] GONG C, MCDONNELL S, QIN X Y, et al. Realistic metal-graphene contact structures[J]. ACS Nano, 2014, 8(1): 642-649.
[138] BLOSCHOCK K P, BAR-COHEN A. Advanced thermal management technologies for defense electronics[C]. Defense Transformation and Net-Centric Systems 2012. Baltimore, Maryland, USA. SPIE, 2012: 157-168.
[139] BAR-COHEN A, MAURER J J, SIVANANTHAN A. Near-junction microfluidic cooling for wide bandgap devices[J]. MRS Advances, 2016, 1(2): 181-195.
[140] ALBANO B, WANG B Y, ZHANG Y H, et al. Electro-thermal device-package co-design for ultra-wide bandgap gallium oxide power devices[C]. 2022 IEEE Energy Conversion Congress and Exposition (ECCE). October 9-13, 2022, Detroit, MI, USA. IEEE, 2022: 1-7.
[141] TIERNEY B D, CHOI S, DASGUPTA S, et al. Evaluation of a “field cage” for electric field control in GaN-based HEMTs that extends the scalability of breakdown into the kV regime[J]. IEEE Transactions on Electron Devices, 2017, 64(9): 3740-3747.
[142] LENG Z, YANG Z Y, TANG X X, et al. Progress in percolative composites with negative permittivity for applications in electromagnetic interference shielding and capacitors[J]. Advanced Composites and Hybrid Materials, 2023, 6(6): 195.
[143] TIAGULSKYI S, YATSKIV R, CˇERNOHORSKY＇ O, et al. Perspectives of miniaturization of β-Ga₂O₃ devices with graphene electrodes[J]. Materials Science in Semiconductor Processing, 2024, 176: 108343.
[144] YUAN H D, SU J, ZHANG J, et al. Synergistic effect of covalent functionalization and intrinsic electric field on β-Ga₂O₃/graphene heterostructures[J]. Applied Physics Letters, 2022, 121(23): 231601.
[145] KARMAKAR S, SHIAM I F, MANIKANTHABABU N, et al. Upheaval of negative dielectric permittivity and semiconductor to metallic transition in a thermally induced Sn-doped β-Ga₂O₃ (201) single crystal[J]. ACS Applied Materials & Interfaces, 2024, 16(36): 48488-48501.
[146] LIU A C, HSIEH C H, LANGPOKLAKPAM C, et al. State-of-the-art β-Ga₂O₃ field-effect transistors for power electronics[J]. ACS Omega, 2022, 7(41): 36070-36091.
[147] CANBAY C A, KARADUMAN O. The photo response properties of shape memory alloy thin film based photodiode[J]. Journal of Molecular Structure, 2021, 1235: 130263.
[148] POLVERINO S. Graphene-based construction materials: experimentation and application development[D]. Liguria, Italy: University of Genoa, 2021.
[149] YOO T J. Leveraging multimodal data analytics with advanced electron microscopy to obtain quantitative structural insights into complex materials[D]. Florida: University of Florida, 2024.
[150] SARUA A, JI H F, HILTON K P, et al. Thermal boundary resistance between GaN and substrate in AlGaN/GaN electronic devices[J]. IEEE Transactions on Electron Devices, 2007, 54(12): 3152-3158.
[151] SUN H R, SIMON R B, POMEROY J W, et al. Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications[J]. Applied Physics Letters, 2015, 106(11): 111906.
[152] MANOI A, POMEROY J W, KILLAT N, et al. Benchmarking of thermal boundary resistance in AlGaN/GaN HEMTs on SiC substrates: implications of the nucleation layer microstructure[J]. IEEE Electron Device Letters, 2010, 31(12): 1395-1397.
[153] SHI J J, YUAN C, HUANG H L, et al. Thermal transport across metal/β-Ga₂O₃ interfaces[J]. ACS Applied Materials & Interfaces, 2021, 13(24): 29083-29091.
[154] CHENG Z, GRAHAM S, AMANO H, et al. Perspective on thermal conductance across heterogeneously integrated interfaces for wide and ultrawide bandgap electronics[J]. Applied Physics Letters, 2022, 120(3): 030501.
[155] CHENG Z, LI R Y, YAN X X, et al. Experimental observation of localized interfacial phonon modes[J]. Nature Communications, 2021, 12(1): 6901.
[156] MURAKAMI T, HORI T, SHIGA T, et al. Probing and tuning inelastic phonon conductance across finite-thickness interface[J]. Applied Physics Express, 2014, 7(12): 121801.
[157] GIRI A, HOPKINS P E. Analytical model for thermal boundary conductance and equilibrium thermal accommodation coefficient at solid/gas interfaces[J]. Journal of Chemical Physics, 2016, 144(8): 084705.
[158] ALEM S A A, LATIFI R, ANGIZI S, et al. Microwave sintering of ceramic reinforced metal matrix composites and their properties: a review[J]. Materials and Manufacturing Processes, 2020, 35(3): 303-327.
[159] BOTELER L M, NIEMANN V A, URCIUOLI D P, et al. Stacked power module with integrated thermal management[C]. 2017 IEEE International Workshop on Integrated Power Packaging (IWIPP). April 5-7, 2017, Delft, Netherlands. IEEE, 2017: 1-5.
[160] JOHN R, ATXAGA G, FRERKER H J, et al. Advancement of multifunctional support structure technologies (AMFSST)[C]. in 2007 13th International Workshop on Thermal Investigation of ICs and Systems (THERMINIC). September 17-19, 2007, Budapest, Hungary. IEEE, 2007: 98-103.
[161] BUTTAY C, PLANSON D, ALLARD B, et al. State of the art of high temperature power electronics[J]. Materials Science and Engineering: B, 2011, 176(4): 283-288.
[162] NEUDECK P G, OKOJIE R S, CHEN L Y. High-temperature electronics - a role for wide bandgap semiconductors?[J]. Proceedings of the IEEE, 2002, 90(6): 1065-1076.
[163] YAO Y Y, LU G Q, BOROYEVICH D, et al. Survey of high-temperature polymeric encapsulants for power electronics packaging[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2015, 5(2): 168-181.
[164] KHAZAKA R, MENDIZABAL L, HENRY D, et al. Assessment of dielectric encapsulation for high temperature high voltage modules[C]. 2015 IEEE 65th Electronic Components and Technology Conference (ECTC). May 26-29, 2015, San Diego, CA, USA. IEEE, 2015: 1914-1919.
[165] LIU L B, NAM D, GUO B, et al. Glass for encapsulating high-temperature power modules[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2021, 9(3): 3725-3734.
[166] MASSON A, SABBAH W, RIVA R, et al. Die attach using silver sintering. Practical implementation and analysis[J]. European Journal of Electrical Engineering, 2013, 16(3/4): 293-305.
[167] GERSH J, DIMARINO C, DEVOTO D, et al. Reliability analysis of large-area, low-pressure-assisted silver sintering for medium-voltage power modules[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2022, 10(5): 5252-5259.
[168] GERSH J, DIMARINO C, DEVOTO D, et al. Evaluation of low-pressure-sintered multi-layer substrates for medium-voltage SiC power modules[C]. 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). June 14-17, 2021, Phoenix, AZ, USA. IEEE, 2021: 20-26.
[169] CAIRNIE M, GERSH J, DIMARINO C. Thermal and thermomechanical analysis of a 10 kV SiC MOSFET package with double-sided cooling[C]. 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). November 7-11, 2021, Redondo Beach, CA, USA. IEEE, 2021: 394-399.
[170] BAR-COHEN A, MAURER J J, SIVANANTHAN A. Near-junction microfluidic thermal management of RF power amplifiers[C]. 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS). November 2-4, 2015, Tel Aviv, Israel. IEEE, 2015: 1-8.
[171] JOISHI C, ZHANG Y W, XIA Z B, et al. Breakdown characteristics of β-(Al_0.22Ga_0.78)₂O₃/Ga₂O₃ field-plated modulation-doped field-effect transistors[J]. IEEE Electron Device Letters, 2019, 40(8): 1241-1244.
[172] VAN ERP R, SOLEIMANZADEH R, NELA L, et al. Co-designing electronics with microfluidics for more sustainable cooling[J]. Nature, 2020, 585(7824): 211-216.
[173] DING C, LIU H, NGO K D T, et al. A double-side cooled SiC MOSFET power module with sintered-silver interposers: I-design, simulation, fabrication, and performance characterization[J]. IEEE Transactions on Power Electronics, 2021, 36(10): 11672-11680.
[174] LASANCE C J M, SIMONS R E. Advances in high-performance cooling for electronics[J]. Electronics Cooling, 2005, 11(4): 22-39.
[175] GEBRAEL T, LI J Q, GAMBOA A R, et al. High-efficiency cooling via the monolithic integration of copper on electronic devices[J]. Nature Electronics, 2022, 5: 394-402.
[176] CAIRNIE M, DIMARINO C. Review of electric field reduction methods for medium-voltage power modules[C]. CIPS 2022; 12th International Conference on Integrated Power Electronics Systems. March 15-17, 2022, Berlin, Germany. VDE, 2022: 1-6.