Effect of Thermal Shield Position on Melt Flow Field and Oxygen Migration Path

doi:10.16553/j.cnki.issn1000-985x.2026.0085

Abstract

Abstract: Monocrystalline silicon components serve as core parts of semiconductor equipment and are widely used in various high-temperature manufacturing processes of integrated circuits. Oxygen content dominates their performance and service life. With distinct control standards for different application scenarios， precise oxygen control is critical to industrial development. This paper investigates the influence of thermal shield position on the argon flow field， melt flow field and temperature field， and further reveals the internal mechanism of the synergistic effect between the melt flow field and temperature field on the dissolution capacity， migration flux and migration path of oxygen impurities. The results show that reducing the spacing between the thermal shield and the crystal can increase the argon flow velocity near the triple-phase point， enhance crystal heat dissipation， stabilize the growth interface and improve the removal efficiency of oxygen impurities. Meanwhile， it homogenizes the melt temperature field， inhibits quartz crucible dissolution， optimizes melt turbulent viscosity， and weakens the transport and migration of oxygen impurities in the melt. In addition， compact small eddies form on the melt surface， altering the migration path of oxygen impurities. Under the combined effect of melt flow field and temperature field， the maximum radial oxygen content of the crystal decreases by 0.275×10¹⁷ atoms/cm³， and the average value decreases by 0.206×10¹⁷ atoms/cm³.

Key words: Czochralski monocrystalline silicon; thermal shield position; oxygen migration path; crystal oxygen content; melt flow field

CLC Number:

YANG Pingping, LI Shaomeng, YANG Fei, ZHAO Ziwei, GAO Mangmang. Effect of Thermal Shield Position on Melt Flow Field and Oxygen Migration Path[J]. Journal of Synthetic Crystals, 2026, 55(9): 1437-1447.

Figures/Tables 18

References 20

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d/mm	T_min/K	T_max/K	T_ave/K
20	1 685	1 700.9	1 691.85
30	1 685	1 702.7	1 693.11
40	1 685	1 704.2	1 694.17
50	1 685	1 705.5	1 695.15
50	1 685	1 706.8	1 695.98

d/mm	T_min/K	T_max/K	T_ave/K
20	1 685	1 700.9	1 691.85
30	1 685	1 702.7	1 693.11
40	1 685	1 704.2	1 694.17
50	1 685	1 705.5	1 695.15
50	1 685	1 706.8	1 695.98

d/mm	Minimum oxygen concentration/ （10¹⁷ atoms·cm^-3）	Maximum oxygen concentration/ （10¹⁷ atoms·cm^-3）	Average oxygen concentration/ （10¹⁷ atoms·cm^-3）	Max-min difference/ （10¹⁷ atoms·cm^-3）
20	8.947	10.348	10.035	1.401
30	9.034	10.513	10.167	1.479
40	9.053	10.542	10.180	1.507
50	9.100	10.601	10.225	1.501
60	9.121	10.623	10.241	1.502

d/mm	Minimum oxygen concentration/ （10¹⁷ atoms·cm^-3）	Maximum oxygen concentration/ （10¹⁷ atoms·cm^-3）	Average oxygen concentration/ （10¹⁷ atoms·cm^-3）	Max-min difference/ （10¹⁷ atoms·cm^-3）
20	8.947	10.348	10.035	1.401
30	9.034	10.513	10.167	1.479
40	9.053	10.542	10.180	1.507
50	9.100	10.601	10.225	1.501
60	9.121	10.623	10.241	1.502