Research of Heat Exchange at Growing of Sapphire Crystals by a Horizontal Crystallization Method
Ju.Linhart
2003, 32(6):
591-600.
Asbtract
(
26 )
PDF (330KB)
(
34
)
Related Articles |
Metrics
A methodology of computation heat units nodes of various type of crystallization equipment was presented, based on the solution combination of inner (in a container with a crystal) and outer (in a working volume of heat unit and heat insulation of the equipment) problem of heat exchange. Modeling results were compared with experiments for horizontal direction crystallization equipment for growing sapphire plate. The description of the experimentally found out phenomenon of jumps of a temperature field was given. The possible reasons for their occurrence process in growth of sapphire crystals by the horizontal direction crystallization method were analyzed. Conclusions were made on scope of application and modeling accuracy.
E-mail Alert
RSS
