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Table of Content
15 October 2004, Volume 33 Issue 5
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Study on the Growth and Morphology of CsB3O5 Crystals
2004, 33(5): 695-698.
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Near-stoichiometric LiNbO3 Single Crystal Grown by Czochralski Method from LiO2 Rich Melt
2004, 33(5): 699-702.
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A Review on Physical and Chemical Studies of REBa2Cu3O7-δ/MgO Liquid Phase Epitaxy Growth in Initial Stage
2004, 33(5): 703-711.
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Analysis and Design of Temperature Field of SiCGe Alloy Growth by Hot-wall Chemical Vapor Deposition on SiC Substrates
2004, 33(5): 712-716.
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Synthesis and Crystal Structure of a New Three-dimensional Sandwich Inclusion Compound
2004, 33(5): 717-721.
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Growth of Beta Barium Borate (β-BBO) Thin Films by Liquid Phase Epitaxy
2004, 33(5): 722-725.
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Large Area Deposition of B-doped CVD Diamond Film
2004, 33(5): 726-730.
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The Progress and Problems of High-k Materials
2004, 33(5): 731-735.
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The Latest Progress in Research on Photocatalytic Degradation of Dyes in Aqueous Solution by Nanocrystals
2004, 33(5): 736-740.
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Effect of Ambient Conditions on the Growth Process by Bridgman Method
2004, 33(5): 741-746.
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The growth process by Bridgman method was computed under different growth conditions, and the effects of conditions on the growth process were investigated. Properly greater temperature gradient, heat transfer coefficient and suitable bottom cooling are requirements for Bridgman method and also important for technics optimizing.
Effect of RTA on Grown-in Defects in Large-diameter CZSi
2004, 33(5): 747-750.
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Determining the Optimal Growth Orientation of BiB3O6 Crystal
2004, 33(5): 751-754.
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Influence of Annealing on the Properties of ZnO Thin Film
2004, 33(5): 755-757.
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Preparation of La0.9Sr0.1Ga0.8Mg0.2O3-δ Solid Electrolyte for Intermediate Temperature by Gel-combustion Method
2004, 33(5): 758-761.
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Preparation of Lead-free K0.5Bi0.5TiO3 Ferroelectric Thin Films by Metalorganic Decomposition Method
2004, 33(5): 762-764.
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Study on Refining Grains of Nanocrystalline Materials Based on Electrodeposition
2004, 33(5): 765-769.
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The Spectrum Properties and the Laser Damage Threshold of Yb:GdVO4 Crystals
2004, 33(5): 770-775.
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Effect of Thermal Annealing on the Optical and Electrical Properties of ZnO:Al Thin Films Prepared by Electron Beam Evaporation
2004, 33(5): 776-780.
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Intrinsic Gettering Effect in Heavily Doped CZSi Wafers
2004, 33(5): 781-783.
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Study of the Photoelectron Decay Behavior in Sulfur-sensitized AgBrCl Cubic Microcrystal
2004, 33(5): 784-787.
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Microstructures and Electrical Properties of N-type Pseudo-ternary Thermoelectric Materials Prepared by Hot-pressing Method
2004, 33(5): 788-791.
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Characteristic of FTIR Absorption Spectrum of Ge-doped CZSi
2004, 33(5): 792-796.
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Electron Transport through Three-terminal Nano-molecular Bridge
2004, 33(5): 797-800.
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Single Crystal Growth of a New Tetragonal Tungsten Bronze Ca0.28Ba0.72Nb2O6 Crystal
2004, 33(5): 801-805.
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UV Emission Properties of Yb:YAG Scintillation Crystal
2004, 33(5): 806-809.
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Growth of Acousto-optic TeO2 Single Crystal with Large Size and High Quality
2004, 33(5): 810-812.
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Progress of Study on Upconversion Laser Crystals
2004, 33(5): 813-816.
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Preparation of 0.87 Na0.5Bi0.5TiO3-0.13PbTiO3 Thin Films by MOSD+Dipping Method
2004, 33(5): 817-819.
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Review of Progress in Lead Tungstate (PbWO4) Scintillation Crystals
2004, 33(5): 820-825.
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Spectroscopy of Nd:NaY(WO4)2 Single Crystal
2004, 33(5): 826-829.
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Synthesis of Straight and Multiwall Carbon Nanotube by CVD Method
2004, 33(5): 830-834.
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Numerical Simulation on the Effect of Rotation in a Czochralski Silicon Crystal Growth with a Turbulence Model
2004, 33(5): 835-840.
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Research on the Structure of the Heterojunction of the CIGS Thin Film Solar Cells
2004, 33(5): 841-844.
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Spectral Response of a Novel Design of InP Single Crystal Thin Film Solar Cells
2004, 33(5): 845-847.
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Discussion on the Mechanism of Crystal Growth during the Solid Forming
2004, 33(5): 848-856.
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Study on Order Parameter of Strontium Titanate during Antiferrodistortive Phase Transition
2004, 33(5): 857-859.
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Polycrystalline GaP Growth by CVT Method
2004, 33(5): 860-862.
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Preparation of Hematite Particles in Solution and the Analysis of Their Formation Process
2004, 33(5): 863-867.
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Comparisons on the Properties of a Class of Nd:YxGd1-xVO4 Mixed Crystals and Its Q-switching Laser
2004, 33(5): 868-870.
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Investigation of the Formation and Control of the Agglomerates during the Preparation of Nanometer ZrO2 Powder by the Precipitation Method
2004, 33(5): 871-875.
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100TW CPA fs Laser Output of Ti:Sapphire Crystal in SIOM
2004, 33(5): 876-876.
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Journal Information
Start Pub: 1972 Monthly
Name: Journal of Synthetic Crystals
Responsible Institution: China Building Materials Federation
Sponsor: Research Institute of Synthetic Crystals Co.,Ltd.
Chief Editor: ZHU Shining
Executive Chief Editor: PENG Zhenzhen
ISSN: 1000-985X
CN: 11-2637/O7
Tel: +86-10-65491290
Post Code: BM7928
Price: 80 Yuan
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Bulletin of yhe Chinese Ceramic Society
Beijing Sinoma Synthetic Crystal Co., Ltd.
National Laboratory of Solid State Microstructures
State Key Laboratory of Crystal Materials
State Key Laboratory of Solidification Processing
Institute of Functional Crystals
State Key Laboratory of Superhard Materials
State Key Laboratory of Silicon Materials Zhejiang University
Key Laboratory of Semiconductor Materials Science
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