关键词: SiC薄膜;多晶;场致发射;I～V特性;拟合

Abstract: Besides the general advantages as diamond films in FEE, SiC film is able to be n-type doped or p-type doped easily. The SiC films have been developed as cold cathodes by APCVD. It is found in the FEE tests that the onset field strength is as low as 0.3 MV/m. According to the theoretical analysis about the emission procedure an exponential increase model is deduced to understand the FEE results. According to the model, the electron injection from substrate to the film plays an important role in the FEE, and the electron transport in the film is vital for the FEE. So the distance between the two adjacent conductive centers can be estimated of 0.6 nm.

Key words: Besides the general advantages as diamond films in FEE, SiC film is able to be n-type doped or p-type doped easily. The SiC films have been developed as cold cathodes by APCVD. It is found in the FEE tests that the onset field strength is as low as 0.3 MV/m. According to the theoretical analysis about the emission procedure an exponential increase model is deduced to understand the FEE results. According to the model, the electron injection from substrate to the film plays an important role in the FEE, and the electron transport in the film is vital for the FEE. So the distance between the two adjacent conductive centers can be estimated of 0.6 nm.