关键词: AgGaS2;多晶合成;单晶生长;二温区气相输运温度振荡方法;改进Bridgman法;结晶完整

Abstract: High-pure AgGaS2 polycrystal of single-phase and high-density has been synthesized by two-zone vapor-transporting and temperature-oscillating method.The lattice constant and the location of S atom were calculated to be a＝5.753nm,c＝10.3008nm and x＝0.279,with little discrepancy comparing to PDF value,which showed the high-quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X-ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.

Key words: High-pure AgGaS2 polycrystal of single-phase and high-density has been synthesized by two-zone vapor-transporting and temperature-oscillating method.The lattice constant and the location of S atom were calculated to be a＝5.753nm,c＝10.3008nm and x＝0.279,with little discrepancy comparing to PDF value,which showed the high-quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X-ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.