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人工晶体学报 ›› 2003, Vol. 32 ›› Issue (6): 591-600.

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水平结晶法生长蓝宝石晶体的热交换研究

  

  1. 进步技术公司,布拉格 10100,捷克共和国
  • 出版日期:2003-12-15 发布日期:2021-01-20

Research of Heat Exchange at Growing of Sapphire Crystals by a Horizontal Crystallization Method

Ju.Linhart   

  • Online:2003-12-15 Published:2021-01-20

摘要: 本文通过综合处理结晶设备内部(含有晶体的容器里)和外部(设备的工作空间:加热件和热绝缘)的热交换问题,给出了对不同类型结晶设备热系统的计算研究.数学模型计算的结果与用水平定向结晶设备生长蓝宝石板的实验作了比较,描述了实验发现的温场突变现象,并就水平定向生长蓝宝石晶体分析了它产生的可能原因.给出了模型准确性和应用范围的结论.

关键词: 水平定向生长;蓝宝石晶体;热交换;数学模型;计算方法

Abstract: A methodology of computation heat units nodes of various type of crystallization equipment was presented, based on the solution combination of inner (in a container with a crystal) and outer (in a working volume of heat unit and heat insulation of the equipment) problem of heat exchange. Modeling results were compared with experiments for horizontal direction crystallization equipment for growing sapphire plate. The description of the experimentally found out phenomenon of jumps of a temperature field was given. The possible reasons for their occurrence process in growth of sapphire crystals by the horizontal direction crystallization method were analyzed. Conclusions were made on scope of application and modeling accuracy.

Key words: A methodology of computation heat units nodes of various type of crystallization equipment was presented, based on the solution combination of inner (in a container with a crystal) and outer (in a working volume of heat unit and heat insulation of the equipment) problem of heat exchange. Modeling results were compared with experiments for horizontal direction crystallization equipment for growing sapphire plate. The description of the experimentally found out phenomenon of jumps of a temperature field was given. The possible reasons for their occurrence process in growth of sapphire crystals by the horizontal direction crystallization method were analyzed. Conclusions were made on scope of application and modeling accuracy.

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